Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/84708
標題: Developing high-transmittance heterojunctiondiodes based on NiO/TZO bilayer thin films
關鍵字: Titanium-doped zinc oxide;Nickel oxide;Heterojunction diode;Space-charge limited current
Project: Nanoscale Research Letters 2013, Volume 8, Issue 206.
摘要: 
In this study, radio frequency magnetron sputtering was used to deposit nickel oxide thin films (NiO, deposition powerof 100 W) and titanium-doped zinc oxide thin films (TZO, varying deposition powers) on glass substrates to form p(NiO)-n(TZO) heterojunction diodes with high transmittance. The structural, optical, and electrical properties of the TZOand NiO thin films and NiO/TZO heterojunction devices were investigated with scanning electron microscopy, X-raydiffraction (XRD) patterns, UV-visible spectroscopy, Hall effect analysis, and current-voltage (I-V) analysis. XRD analysisshowed that only the (111) diffraction peak of NiO and the (002) and (004) diffraction peaks of TZO were observable inthe NiO/TZO heterojunction devices, indicating that the TZO thin films showed a good c-axis orientation perpendicularto the glass substrates. When the sputtering deposition power for the TZO thin films was 100, 125, and 150 W, the I-Vcharacteristics confirmed that a p-n junction characteristic was successfully formed in the NiO/TZO heterojunctiondevices. We show that the NiO/TZO heterojunction diode was dominated by the space-charge limited current theory.
URI: http://hdl.handle.net/11455/84708
DOI: 10.1186/1556-276X-8-206
Appears in Collections:電機工程學系所

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