Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/84732
標題: BroadbandInGaAsquantumdot-in-a-wellsolarcellsofp-typewells
關鍵字: A3. Molecularbeamepitaxy;A3. Quantumdots;B1. InGaAs;B3. Solarcells
Project: Journal of Crystal Growth, Volume378, Page(s) 583-586.
摘要: 
BroadbandInxGa1 xAs quantumdot-in-a-well(DWell)solarcellsaregrownbystackinglayersofcomposition-tailoredInxGa1 xAs (x¼1, 0.75,and0.65)quantumdotsonp-typeIn0.1Ga0.9As quantumwells (QWs).DopingconcentrationandgrowthtemperaturefortheBe-dopedquantumwellsareoptimizedtoenhancetheconversionefficiency(Z). ThebroadbandDWellsolarcellofBe:2 1017 cm 3 QWs grownat570 1C showsthebestphotovoltaiccharacteristicsof Z¼10.86%,whichis 3%higherthanthatoftheGaAsbaselinesolarcell.
URI: http://hdl.handle.net/11455/84732
Appears in Collections:電機工程學系所

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