Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/84734
標題: Numerical Study of Quantum-Dot-EmbeddedSolar Cells
關鍵字: Intermediate band solar cell (IBSC);photovoltaiccells;quantum dot;simulation, tandem cell;transmission matrixmethod
Project: IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, Volume 19, Issue 5.
摘要: 
A quantum-dot-embedded solar cell model with antireflectioncoating is proposed and studied numerically. The devicemodel was designed by using MATLAB coding. A proper inclusionof quantum-dot-enhanced carrier absorption was achievedthrough a modified absorption coefficient and a structure dependentcarrier lifetime. The transmission matrix and quasi-drift diffusionmethod were applied to simulate the optical and electricalcharacteristics of the device. The experimental results were fittedfirst to validate the model and provide parameters for optimization.The final simulation showed that the power conversion efficiency(PCE) of an ideal InGaP/GaAs+InAs QD dual-junction cell couldachieve 39.04%.
URI: http://hdl.handle.net/11455/84734
Appears in Collections:電機工程學系所

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