Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/84734
DC FieldValueLanguage
dc.creatorChien-Chung Linen_US
dc.creatorMing-Hsuan Tanen_US
dc.creatorChe-Pin Tsaien_US
dc.creatorKuei-Ya Chuangen_US
dc.creatorT. S. Layen_US
dc.date2013-09zh_TW
dc.date.accessioned2014-11-19T06:46:39Z-
dc.date.available2014-11-19T06:46:39Z-
dc.identifier.urihttp://hdl.handle.net/11455/84734-
dc.description.abstractA quantum-dot-embedded solar cell model with antireflectioncoating is proposed and studied numerically. The devicemodel was designed by using MATLAB coding. A proper inclusionof quantum-dot-enhanced carrier absorption was achievedthrough a modified absorption coefficient and a structure dependentcarrier lifetime. The transmission matrix and quasi-drift diffusionmethod were applied to simulate the optical and electricalcharacteristics of the device. The experimental results were fittedfirst to validate the model and provide parameters for optimization.The final simulation showed that the power conversion efficiency(PCE) of an ideal InGaP/GaAs+InAs QD dual-junction cell couldachieve 39.04%.en_US
dc.format.medium期刊論文zh_TW
dc.language.isoen_USzh_TW
dc.relationIEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, Volume 19, Issue 5.en_US
dc.subjectIntermediate band solar cell (IBSC)en_US
dc.subjectphotovoltaiccellsen_US
dc.subjectquantum doten_US
dc.subjectsimulation, tandem cellen_US
dc.subjecttransmission matrixmethoden_US
dc.titleNumerical Study of Quantum-Dot-EmbeddedSolar Cellsen_US
item.languageiso639-1en_US-
item.grantfulltextnone-
item.fulltextno fulltext-
Appears in Collections:電機工程學系所
Show simple item record
 

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.