Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/84735
DC FieldValueLanguage
dc.creatorTai-Chao Kuoen_US
dc.creatorYeu-Long Jiangen_US
dc.date2013-10zh_TW
dc.date.accessioned2014-11-19T06:46:39Z-
dc.date.available2014-11-19T06:46:39Z-
dc.identifier.urihttp://hdl.handle.net/11455/84735-
dc.format.medium期刊論文zh_TW
dc.language.isoen_USzh_TW
dc.relationSolar Energy Materials and Solar Cells, Volume 117, Page(s) 617-623.en_US
dc.subjectA-Si:Hen_US
dc.subjectContamination impuritiesen_US
dc.subjectPECVDen_US
dc.subjectQuantum efficiencyen_US
dc.subjectResidual impuritiesen_US
dc.subjectSolar cellsen_US
dc.titleResidual impurities in a process chamber on the characteristics of a-Si:H solar cellsen_US
item.fulltextno fulltext-
item.languageiso639-1en_US-
item.grantfulltextnone-
Appears in Collections:電機工程學系所
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