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|標題:||Accommodation at the interface of highly dissimilar GaN(0 0 0 1)/Sc2O3(1 1 1) heteroepitaxial systems||關鍵字:||GaN;Sc2O3;Interface;Polarity;First-principles calculations||Project:||Scripta Materialia, Volume 68, Issues 3–4, Page(s) 211-214.||摘要:||
We present first-principles calculations to study the heterojunction between a wurtzite GaN(0 0 0 1) film and a cubic Sc2O3(1 1 1) substrate. We report that the most favorable interface consists of the graphitic-like GaN nanofilms, indicating that the nanofilms can accommodate the misfit strain relaxation at heteroepitaxial interfaces. This interface structure gives rise to Ga polarity in the GaN(0 0 0 1) epitaxial film. Our findings agree with previously reported experimental results.
|Appears in Collections:||精密工程研究所|
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