Please use this identifier to cite or link to this item:
標題: P-side up AlGaInP-based light emitting diodeswith dot-patterned GaAs contact layers
Project: Optics Express, Volume 21, Issue 17, Page(s) 19668-19674.
High-brightness p-side up AlGaInP-based red light emitting diodes (LEDs) with dot-patterned GaAs contact layer and surface rough structure are presented in this article. Initial LED structure of p-GaP/AlGaInP/GaAs is epitaxially grown using metal organic chemical vapor deposition technique. Using novel twice transferring process, the p-GaP layer is remained at the top side as both the current spreading and-window layer. Dot patterned GaAs contact dots are formed between main structure and rear mirror to improve light reflection and current spreading. Moreover, the surface of p-GaP window is further textured by nano-sphere lithography technique for improving the light extraction. Significant improvement in output power is found for AlGaInP LEDs with GaAs contact dots and roughened p-GaP window as compared with those of LEDs with traditional n-side up and p-side up structures without roughened surfaces.
DOI: 10.1364/OE.21.019668
Appears in Collections:精密工程研究所

Files in This Item:
File Description SizeFormat Existing users please Login
2014-3-4-3-5-3.pdf859.61 kBAdobe PDFThis file is only available in the university internal network    Request a copy
Show full item record

Google ScholarTM




Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.