Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/84838
標題: Nickel substrate covered with a Sn-based protection bi-layer as aphotoanode substrate for dye-sensitized solar cells
關鍵字: Photoanode;Dye-sensitized solar cell;Nickel;Tin;Electroplating
Project: Electrochimica Acta, Volume 99, Issue1, Page(s) 230-237.
摘要: 
Ni is a metallic substrate commonly used in microelectronic and opto-electronic devices due to its highstability, cost-efficiency and flexibility. Up to now, Ni has not yet been used as the substrate for thephotoanode in dye-sensitized solar cell (DSSC) because the formation of p-type Ni oxide hinders theelectron transfer from n-type TiO2mesoporous film to Ni substrate. In this paper, a Sn-based protectionbi-layer coating on the Ni foil successfully turns Ni into a good photoanode substrate in DSSC. A Sn layeris initially electroplated onto the Ni surface to prevent its oxidation. The Sn layer is then transformed intoa bi-layer of SnO2and Ni–Sn intermetallic compound after high-temperature TiO2sintering. Unlike thep-type Ni oxide layer, the top n-type SnO2layer enables the electron transfer from the TiO2mesoporousfilm to the conductive Ni substrate because its energy level of conduction band well matches that of TiO2.In addition, the interfacial Ni–Sn intermetallic compound is a good electrical conductor which facilitatesthe electron transfer. By carefully controlling the plating current density and time, a 1.2- m-thick Snlayer with a smooth surface morphology is formed and is recognized as the best protection layer over theNi substrate. The energy conversion efficiency of the resultant DSSC achieves 4.422% with a short-circuitcurrent density of 10 mA/cm2, an open-circuit voltage of 0.643 V, and fill factor of 0.689 under AM 1.5back-side illumination.
URI: http://hdl.handle.net/11455/84838
DOI: 10.1016/j.electacta.2013.03.126
Appears in Collections:化學工程學系所

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