Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/8504
標題: Ⅲ-Ⅴ族HBT元件之電性量測研究
Electrical Characterization of Ⅲ-ⅤCompound HBT device
作者: 黃建傑
Huang, Chien-Chieh
關鍵字: 磷化銦鎵/砷化鎵;Ledge;最大穩定功率增益;InGaP/GaAs;MSG
出版社: 電機工程學系所
引用: [1] Hans Hjelmgren, IEEE Trans. on ED, Feb. 2001. [2] M. Levinshtein, S. Rumyantsev, “Handbook Series on Semiconductor Parameters” World Scientific, 1996. [3] W. Liu, “Fundamentals of III-V Devices,” Wiley, New York, pp.146-150, 1999. [4] Sandip Tiwari and Steven L. Wright, 1990, “Material properties ofp-type GaAs at large dopings,” Appl. Phys. Lett., vol.56, no.6,pp.563-565. [5] Sadao Adachi, 1982, “Material parameters of In1-xGaxAsyP1-y andrelated binaries”, J. Appl. Phys., vol.53, no.12, pp.8775-8792. [6] E. S. Harmon, M. R. Melloch, and M. S. Lundstrom, 1994,“Effective band-gap shrinkage in GaAs”, Appl. Phys. Lett., vol.64,no.4, pp.502-504. [7] H. K. Gummel and H. C. Poon, “ An integrated charge control model of bipolar transistors,” Bell Syst. Tech. J., Vol. 49, pp.827-852, May 1970. [8] W. Liu, “ Handbook of Ⅲ-Ⅴ Heterojunction Bipolar Transistor,” Willy,New York, 1986. [9] Ghun-Wei Ku ,“Study of Influences of Emitter Ledge Thickness on Device Properties and Thermal Stability of Heterojunction BipolarTransistors (HBTs)”碩士論文,國立成功大學,民國九十六年六月。 [10]洪琦婷,”The Analysis of Scalable InGaP/GaAs Power HBTs andEstablishment of VBIC Model” 國立中央大學, 民國 九十五年一月。 [11] 范振中, “磷化銦鎵/砷化鎵異質接面雙極性電晶體之研製及其集極調變對元件特性的影響” 碩士論文,國立中央大學,民國89年。 [12] 蔡旻倪,”異質接面雙極性電晶體 VBIC 模型建立及其功率特性模擬碩士論文”. 國立中央大學, 民國 九十二年一月。 [13] 洪志明, “高速磷化銦異質接面雙載子電晶體之研製” 碩士論文, 國立中央大學, 民國92 年。 [14] 奈米通訊,第七第三期19.高頻元件量測技術。 [15] NDL50G高頻機台操作講議。
摘要: 
無線通訊產品是目前很熱門的,在微波電路中,RF 功率放大器則佔有重要的角色。有鑑於 Ⅲ-Ⅴ 族材料系統極佳之高速表現及高電子移動率特性,使得磷化銦鎵/砷化鎵異質接面雙極性電晶體在無線通訊高頻積體電路應用上極具發展潛力,異質接面雙極性電晶體,由於具有高速操作及高電流驅動能力,近幾年來已被廣泛的應用在數位及微波積體電路上。本篇論文的主要目的即是在探討HBT 元件之直流與交流特性。其元件採用 穩懋 2μm 製程的 InGaP/GaAs HBT。一方面先量測分析實際HBT 元件的直流特性.另一方面則是利用向量式網路分析儀Vector Network Analyzer 及GSG 共平面式RF 探針,來量測其雙埠網路的高頻S參數,來探討HBT的高頻特性。量測結果顯示元件具有良好的直流、微波及高溫操作特性,這些優點顯示元件非常適合應用於高速和低消耗功率電路中。

Wireless communication products are popular with the public at present. In microwave circuits,RF power amplifier play an important role. These products are required to be operated at high frenquency wave circit.It is well known that the high electron mobilities and velocities in III-V compound semiconductor materials make InGaP/GaAs heterojunction bipolar transistors (HBTs) be attractive for wireless communication Radio-Frequency IC applications. Due to the excellent current driving capability and microwave performances, Heterojunction bipolar transistors (HBTs) have extensively employed on digital and analogy applications.The purpose of this thesis is to discuss the DC and AC characteristic of a HBT device.The device we used is n-p-n InGaP/GaAs HBT with Emitter-Ledge Structure of WIN 2um process.On the one hand, we measure and analyze the DC characteristic of an actual BJT device. on the other hand, we measure the RF parameters (S-parameter, ex: reflection coefficient ) of our device to find the RF properties of two-ports network.From our measurement data, show good DC and microwave characteristics, lower leakage current, lower offset voltage, and superior microwave. These advantages suggest that the proposed devices are suitable for high-speed and low-power and communication systems.
URI: http://hdl.handle.net/11455/8504
其他識別: U0005-1507200909125200
Appears in Collections:電機工程學系所

Show full item record
 

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.