Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/8511
標題: Ⅲ-Ⅴ族pHEMT元件之電性量測研究
Electrical Measurements of Ⅲ-Ⅴ Compound pHEMT Device
作者: 謝國暉
Hsieh, Kuo-Hui
關鍵字: I-V curves;電流-電壓特性;fT and fmax;高頻特性
出版社: 電機工程學系所
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摘要: 
高電子遷移率電晶體於高溫、高頻及高功率工作環境下之優秀表現使其得以廣泛的應用於軍用雷達系統、個人行動電話與基地台等用途上。本論文主要係驗證穩懋半導體公司所提供之pHEMT元件效能。在論文中,我們廣泛的研究高電子遷移率電晶體的特性,量測元件之電流-電壓特性曲線(I-V curves)與高頻特性 (fT , fmax)。實驗結果顯示,由直流特性曲線圖IDS-VDS可知當VGS=0.8V汲極飽和電流為72.5 mA/mm。另外,由IDS-VGS曲線可得元件之臨界電壓(Vth)為0.49 V。而元件操作在VDS=1.0 V時最大轉導係數(Gm)為320 mS/mm。本論文之研究,提供協助吾人更加了解與驗證高電子遷移率電晶體之元件物理特性、元件設計之最佳化分析,以及HEMT元件的相關應用。

High Electron Mobility Transistors (HEMTs) technologies are widely used in military radars, mobile phones, and wireless base stations owing to their excellent performance of operating in high temperature, high frequency and large power. In this thesis, a more comprehensive study of the pseudomorphic-HEMT devices provided from the WIN Semiconductor Corporation was reported. We measured both of the DC (I-V curves) and high frequency characteristics (fT and fmax) of the devices.
The results indicate that the drain saturation current is 72.5 mA/mm based on IDS-VDS DC characteristic measurement when there is no VGS bias. Furthermore, according to the IDS-VGS curves, the threshold voltage is 0.49 V and the max transconductance, Gm, is 320 mS/mm as VDS equals to 1.0 V. This study helps to demonstrate and understand the device physics, device optimization, and device application of high electron mobility transistors.
URI: http://hdl.handle.net/11455/8511
其他識別: U0005-1607200911173200
Appears in Collections:電機工程學系所

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