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Study and Analysis on 90 nm Radio-Frequency MOS Transistor
|關鍵字:||MOS transistor;金氧半場效電晶體;Multi-finger type;Threshold voltage;Cut-off frequency;Maximum oscillation frequency;Unconditional stability frequency;多指型;臨界電壓;截止頻率;最大震盪頻率;無條件穩定頻率||出版社:||電機工程學系所||引用:|| A. Rofougaran, J. Y.-C. Chang, M. Rofougaran, and A. A. Abidi, “A 1 GHz CMOS RF front-end IC for a direct-conversion wireless receiver,” IEEE J. Solid-State Circuits, Vol. 31, No. 7, pp. 880-889, 1996.  C. C. Enz and E. A. Vittoz, “An analytical MOS Transistor model valid in all region of operation and dedicated to low voltage and low-current applications,” Analog Integrated Circuit and Signal Process, Vol. 8, pp. 83-114, 1995.  Eyad A.-A. and T. Manku, “A small-signal MOSFET model for radio frequency IC applications,” IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 16, pp. 437-447, May 1997.  Y. Cheng and M. 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This thesis includes two parts. In the first part, the DC characteristic of multi-finger type MOS transistor has been discussed with different layout geometries. Measurement shows that the high gate voltage and low drain voltage have the specific transconductance value. This value could be used to derive the threshold voltage. The semiconductor physics was used to explain the optimal DC bias voltage.
In the second part, the RF characteristic has been analyzed based on previous DC bias. Investigation on the parasitic value in small-signal model has been paid in this thesis. Moreover, the parasitic effect is characterized with different layout parameters. The substrate resistance is investigated in this work. Adopting the concept of power flow, three critical parameters such as cut-off frequency (ft), unconditional stability frequency (fk), and maximum oscillation frequency (fmax) have been discussed comprehensively. Hence, the optimal layout geometry is addressed by the Figure of Merit (FoM). Results of this thesis provide valuable information to design 90 nm RF MOS transistor.
|Appears in Collections:||電機工程學系所|
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