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標題: 本質氮化鎵光電化學濕蝕刻研究
Study on the Photoelectrochemical Etching of Intrinsic Gallium Nitride
作者: 邱奕豪
Chiu, Yi-Hao
關鍵字: Photoelectrochemical Etching;光電化學濕蝕刻;Intrinsic Gallium Nitride;本質氮化鎵
出版社: 電機工程學系所
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從實驗結果顯示,把GaN以間歇性光源輔助化學性濕蝕刻法進行蝕刻,當Laser pulse操作頻率較高時,可以改善蝕刻時試片表面的平坦度。在進行電輔助化學性蝕刻的實驗中,我們發現在外加電流及加熱蝕刻溶液的蝕刻環境,提高KOH濃度且延長蝕刻時間,可以獲得較佳平坦度之蝕刻面。


In the essay, we have researched many etched method of GaN. We chose the way of electrodeless photoelectrochemical etching with a chopped UV source to conduct the etching frame design and experiment, we hope we can apply this method on large area GaN chips making cylinder array LEDs.

From the experiment showing, using GaN proceed to etch with electrodeless photoelectrochemical etching with a chopped UV source can improve the root-mean-square of the sample surface when the laser pulse's frequence is higher. In making the electrochemical etching experiment, we found at the better root-mean-square of the sample surface in etching when we increase KOH concentration and delay the time under the environment of adding photoassisted anodic and etched solution.

In the end, we focus on the GaN's sample surface before and after using electrodeless photoelectrochemical etching with a chopped UV source by plating electrode on the sample surface and measure I-V curves. We found the pure GaN sample surface's I-V curves present Schottky contact, but after etched GaN sample surface's I-V curves present Ohm contact. After longer etching time, GaN's sample surface can produce smaller contact resistance.
其他識別: U0005-2207200921030300
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