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|標題:||Ambipolar MoTe2Transistors and Their Applications in Logic Circuits||作者:||Lin, Yen-Fu
|關鍵字:||Schottky barriers;ambipolar transistors;electronics;transistors||Project:||Advanced Materials, Volume 26, Issue 20, Page(s) 3263-3269.||摘要:||
We report ambipolar charge transport in α-molybdenum ditelluride (MoTe2 ) flakes, whereby the temperature dependence of the electrical characteristics was systematically analyzed. The ambipolarity of the charge transport originated from the formation of Schottky barriers at the metal/MoTe2 contacts. The Schottky barrier heights as well as the current on/off ratio could be modified by modulating the electrostatic fields of the back-gate voltage (Vbg) and drain-source voltage (Vds). Using these ambipolar MoTe2 transistors we fabricated complementary inverters and amplifiers, demonstrating their feasibility for future digital and analog circuit applications.
|Appears in Collections:||物理學系所|
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