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標題: 利用PS-b-PMMA共聚高分子薄膜製備奈米結構之矽奈米柱太陽電池
Formation of nanostructure by self-assembled PS-b-PMMA block copolymer method for silicon nanowire solar cell applications
作者: 鄭碩仁
Jeng, Shuo-ren
關鍵字: PS-b-PMMA;太陽電池
出版社: 電機工程學系所
引用: 第一章 [1.1] S.O.Kasap,“Optoelectronics and Photonics principles and practices” [1.2] 莊嘉琛,太陽能工程—太陽電池篇全華科技,2003年3月 [1.3] Brendan M. Kayes, Harry A. Atwater, “Comparison of the device physics principles of planar and radial p-n junction nanorod solar cells” Journal Of Applied Physic 97, 114302 ,(2005) [1.4] Lu Hu, Gang Chen, “Ananlysis of Optical Absorption in Silicon Nanowire Arrays for Photovoltaic Applications” NANO LETTERS, Volume 7, Number 11, (November 2007) [1.5] Bozhi Tian, Xiaolin Zheng, Thomas J. Kempa, Ying Fang, Nanfnag Yu, Guihua Yu, Jinlin Huang, Charles M. Lieber, “Coaxial silicon nanowires as solar cells and nanoelectronic power sources” NATURE LETTERS, Vol 449, (October 2007) [1.6] L. Tsakalakos, J. Balch, J. Fronheiser, B. A. Korevaar, O. Sulima, J. Rand, “ Silicon nanowire solar cells” APPLIED PHYSICS LETTERS 91, 233117 (2007) 第二章 [2.1] 杜偉新,國立中興大學碩士論文 “ECRCVD成長矽奈米線之研究” 2004年8月 [2.2] Vladimir Sivakova, Frank Heyrothc, “Silicon nanowire growth by electron beam evaporation: Kinetic and energetic contributions to the growth morphology” Journal of Crystal Growth 300 (2007) 288–293 [2.3] Chih-Hsun Hsu, Hung-Chun Lo, Chia-Fu Chen, “Generally Applicable Self-Masked Dry Etching Technique for Nanotip Array Fabrication” NANO LETTERS Vol. 4, No.3, 471-475, (2004) [2.4] Huang-Shen Lin, Chih-Chiang Kao, Hao-Chung Kuo, Shing-Chung Wang, and Gong-Ru Lin, “ Self-Assembled Ni Nanodot on SiO2 Film—A Novel Reactive Ion Etching Mask for Si Nanopillar Formation on Si Substrate ” IEEE ELECTRON DEVICE LETTERS [2.5] Vladimir V. Poborchiia, Tetsuya Tadab,“Si pillar photonic crystal slab with linear defects: transmittance and waveguide properties” Optics Communications 210 (2002) 285–290 [2.6] [2.7] 陳宣毅,物理雙月刊(廿四卷二期)“塊狀共聚物薄膜:自聚合的新材料”2002年 4 月 [2.8] Koji ASAKAWA, Toshiro HIRAOKA, “Nanopatterning with Microdomains of Block Copolymers using Reactive-Ion Etching Selectivity” Jpn. J. Appl. Phys. Vol. 41 (2002) pp. 6112–6118 [2.9] K. W. Guarini,a) C. T. Black,“Nanoscale patterning using self-assembled polymers for semiconductor applications” J. Vac. Sci. Technol. B 19,6, Dec 2001 [2.10] P. Mansky, Y. Liu, E. Huang,“Controlling Polymer-Surface Interactions with Random Copolymer Brushes”1458 (1997); 275 Science [2.11] K. W. Guarini,a) C. T. Black,“Nanoscale patterning using self-assembled polymers for semiconductor applications” J. Vac. Sci. Technol. B 19,6, Dec 2001 [2.12] Vignesh Gowrishankar, Nathaniel Miller,“Fabrication of densely packed, well-ordered, high-aspect-ratio silicon nanopillars over large areas using block copolymer lithography” Thin Solid Films 513 (2006) 289–294 [2.13] Davood Shahrjerdi, Domingo I. Garcia-Gutierrez, “Fabrication of Ni Nanocrystal Flash Memories Using a Polymeric Self-Assembly Approach ”IEEE ELECTRON DEVICE LETTERS, VOL. 28, NO. 9, SEPTEMBER 2007 [2.14] K. W. Guarini,a) C. T. Black, “Nanoscale patterning using self-assembled polymers for semiconductor applications”J. Vac. Sci. Technol. B 19,6, Dec 2001 [2.15] Y.J. Zhang, W. Li, K.J. Chen, “Application of two-dimensional polystyrene arrays in the fabrication of ordered silicon pillars ” Journal of Alloys and Compounds 450 (2008) 512–516 [2.16] Y.J. Zhang, W. Li, K.J. Chen, “Fabrication of large-scale periodic silicon nanopillar arrays for 2D nanomold using modified nanosphere lithography”Applied Surface Science 253 (2007) 9035–9038

In this thesis, we probe into, utilize copolymer membrane PS-b-PMMA form PS endure rice method of ball and the universe etch, make, offer silicon endure rice structure of column with reaction coincidence electric thick liquid ion.
Take an exam of the thesis to reveal, we can be endured the structure of hole of rice on Silicon wafer by macromolecule PS-PMMA which endure the rice size at appropriate temperature, heating time and condition of the heating temperature. Among course to make Cheng, we find glacial acetic acid heat PS-b-PMMA endure rice step of hole will form polystyrene (PS) Endure rice globular structure , from experimental result point out all: With heating the changes of time and temperature, the membrane becomes globular to take shape catenately crackedly finally, and can have and change and endure the quantity change of the rice ball in accordance with heating time.
Etch (RIE) via the universe of electric thick liquid of reactivity ion ,In order to endure rice ball as stop layer regard as, etch, hide, put on. And it is for strengthening endure it is the dark and wide in rice the columns than ,utilize SiO2 not to be come endure there aren''t rice the ball patterns, can get, endure rice silicon of structure endure rice column array, utilize PECVD grow up I layer and N layer form P-I-N type endure the Milan column solar cell and then.
其他識別: U0005-2906200921553700
Appears in Collections:電機工程學系所

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