Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/8846
標題: 射頻場效電晶體之基底效應之研究
Study on substrate effect of RF CMOS device
作者: 王俊升
Wang, Chun-Sheng
關鍵字: substrate resistance;基底電阻
出版社: 電機工程學系所
引用: [1] David M. Pozar, Microwave Engineering, John Wiley & Sons, 2005. [2] Joseph F. White, High frequency techniques, John Wiley & Sons, 2004. [3] Trond Ytterdal et al., Device modeling for analog and RF CMOS circuit design, John Wiley & Son, 2003. [4] Yuhua Cheng et al., “MOSFET modeling for RF IC design,” IEEE Transaction on Electron Devices, vol. 52, pp.1286-1303, July 2005. [5] Lchjin Kwon et al., “A simple and analytical parameter-extraction method of a microwave MOSFET,” IEEE Transations on Microwave Theory and Techniques., vol. 50, pp. 1503-1509, June 2002. [6] Steve Hung-Ning Jen et al, “Accurate modeling and parameter extraction for MOS transistors valid up to 10 GHz,” IEEE Transactions on Electron Device, vol. 11, pp.2217-2227, Nov. 1999. [7] Tin S. F. et al. “Substrate network modeling for CMOS RF circuit simulation,” IEEE Custom Integrated Circuits Conference, pp. 583-586,1999. [8] Ou J,-J. et al. “CMOS RF modeling for GHz communication IC's,” VLSI Sympo-sium on Technology, pp. 94-95, 1998. [9] Cheng Y. “RF modeling issues of deep-submicro MOS-FETs for circuit design,” IEEE International Conference on Solid-State and Integrated Circuit Technology, pp. 416-419, 1998. [10] Liu W. et al. “R.F.MOSFET modeling accounting for distributed substrate and channel resistances with emphasis on the BSIM3v3 SPICE model,” IEDM Technical Diguest of International Electron Device Meeting, 309-312, 1997. [11] Jeonghu Han et al. “A simple and accurate method for extracting substrate resistannce of RF MOSFETs,” IEEE Electron Device Letters, vol. 23, pp. 434-436, July 2002. [12] Yuhua Cheng et al. “Parameter extraction of accurate and scaleable substrate resistance components in RF MOSFETs,” IEEE Electron Device Letters, vol. 23, pp. 221-223, April 2002. [13] In Man Kang et al, “Extraction of π-type substrate resistance based on three-port measurement and the model verification up to 110GHz,” IEEE Electron Device Letters, vol. 28, pp. 425-427, May 2007. [14] Yo-Sheng Lin et al, “An analysis of small- signal substrate resistance effect in deep-submicrometer RF MOSFETs,” IEEE Transactions on Microwave Theory and Techniques, vol. 51, pp. 1534-1539, May 2003. [15] Chung-Hwan et al, “Unique extraction of substrate parameters of common-source MOSFET's,” IEEE Microwave and Guided Wave Letters, vol. 9, pp. 108-110, March 1999. [16] S. Lee et al, “Accurate RF extraction method for resistances and inductances of sub-0.1 μm CMOS transistors,” IEEE Electronics Letters, vol. 41, Nov 2005. [17] In Man Kang et al, “Scalable model of substrate resistance components in RF MOSFETs with bar-type body contact considered layout dimensions,” IEEE Electron Device Letters, vol. 30, pp. 404-406, April 2009. [18] Usha Gogineni et al, “Effect of substrate contact shape and placement on RF Characteristics of 45 nm low power CMOS devices,” IEEE Journal of Solid-State Circuits, vol. 45, pp. 998-1006, May 2010. [19] Jeonghu Han et al. “A scalable model for the substrate resistance in multi-finger RF MOSFETs,” IEEE International Microwave Symposium Deqist, vol. 3, pp. 2105-2108, 2003 [20] N. Srirattana et al, “A new analytical scalable substrate network model for RF MOSFETs,”IEEE International Microwave Symposium Deqist, vol. 2, pp. 699-702, 2004. [21] Seyoung Kim et al, “A direct method to extract the substrate resistance components of RF MOSFETs valid up to 50GHz,” IEEE Silicon monolithic Intergrated Circuits in RF Systems, pp. 235-238, 2004. [22] S. D. Wu et al, “Extraction of substrate parameters for RF MOSFETs based on four-port measurement,” IEEE Microwave Wireless Component Letters, vol. 15, pp. 437-439, June 2005. [23] X. Zhou et al, “Threshold voltage definition and extraction for deep-submicron MOSFETs,” Solid-State Electronics, pp. 507-510, February 2001.
摘要: 
本研究著重於多指叉型金氧半場效應電晶體之射頻特性。主要在於基底電阻(substrate resistance, Rsub)的萃取方法與特性之研究,使用四顆基底保護環(guard–ring)結構不同的NMOS來分析Rsub的變化,為標準TSMC 0.18μm CMOS製程。我們修正一般射頻小信號萃取的缺點並從佈局關係來推算Rsub值,並從兩種萃取方法的結果來比較其差異性。發現電晶體M3擁有最大的Rsub,M1是最小的。利用佈局關係去預測Rsub的行為,並找出主導各基底電阻的佈局因素。最後,使用截止頻率(fT)與最大震盪頻率(fmax)兩個電晶體的優化指數來評估這四顆NMOS的射頻特性優劣。結果顯示fT都相同,而fmax有著正比於Rsub的關係。Rsub是如何去影響單向功率增益U。以實際的量測值提供為金氧半場效電晶體的佈局指標。

In this thesis, the substrate resistance of multi-finger MOSFET have been analyzed. Concentrate on the extraction methods and performance analysis of substrate resistance. Using four kinds of guard-ring structure of NMOS transistors to analyze the behavior of Rsub. A small signal model with substrate resistance is proposed to extract the model parameters. In corporate the calculation of substrate resistance using layout configuration, the substrate resistance is characterized comprehensively. We can find that transistor M3(two-sides structure) has biggest Rsub, M1(ring structure) is smallest. To predict the behavior using layout configuration and identify the impact factor in the layout of Rsub.
Finaly, two figure-of-merit (FOMs) of MOSFETs, cut off frequency (fT) and maximum oscillation frequency (fmax) were used to characterize these four NMOS FETs in radio-frequency operation. The results show that the fT are the same , while the fmax is proportional to the Rsub. Hence the Rsub affects unilateral power gain U. Measurement demonstrates that the proposed algorithm is consort with the extract approach.
URI: http://hdl.handle.net/11455/8846
其他識別: U0005-1708201014411000
Appears in Collections:電機工程學系所

Show full item record
 

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.