Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/8896
標題: 應變工程在半導體元件上的應用
Application of strain engineering on semiconductor devices
作者: 陳俞均
Chen, Yu-Chun
關鍵字: semiconductor;半導体;strain;MOSFET;stress;場效電晶體;應力;應變
出版社: 電機工程學系所
引用: [ 1 ] 奈米通訊第十二卷第一期局部與全面形變矽通道(strained Si channel)互補式金氧半(CMOS) 之材料、製程與元件特性分析(I) [ 2 ] Leptos user manual [ 3 ] J.-M. Chauveau, Y. Androussi, A. Lefebvre, and J. Di Persio, J. Appl. Phys. ,93,7 (2003) [ 4 ] “半導體異質結構的高解析X光繞射分析”柯順祥,國立彰化師範大學碩士論文,民國九十七年七月 [ 5 ] 奈米通訊第六卷第二期,降低平面顯示器之工作電壓的新製程 [ 6 ] S. E. Thompson, G. Sun, K. Wu, J. Lim, and T. Nishida, Tech. Dig. - Int. Electron Devices Meet. 2004, 221. [ 7 ] S. Maikap, C.-Y. Yu, S.-R. Jan, M. H. Lee, and C. W. Liu, IEEE Electron Device Lett. 25, 40 (2004). [ 8 ] C. W. Liu, S. Maikap, and C.-Y. Yu, IEEE Circuits Devices Mag. 21, 21 (2005). [ 9 ] H. Irie, K. Kita, K. Kyuno, and A. Toriumi, Tech. Dig. IEDM, 225 (2004). [ 10 ] S. Maikap, M. H. Liao, F. Yuan, M. H. Lee, C.-F. Huang, S. T. Chang, and C. W. Liu, IEDM. Tech. Dig., 233 (2004). [ 11 ] Arvind Shah*, J. Meier, E. Vallat-Sauvain, C. Droz, U. Kroll, N.Wyrsch, J.Guillet, U. Graf. Thin Solid Films 403-404(2002)179-187 [ 12 ] O. Vetterl, F. Finger*, R. Carius, P. Hapke, L. Houben, O. Kluth,A. Lambertz, A. MuK ck, B. Rech, H. Wagner. Solar Energy Materials & Solar Cells 62 (2000) 97-108. [ 13 ] Corinne Droz, Evelyne Vallat-Sauvain, Julien Bailat, Luc Feitknecht, Johannes Meier, Xavier Niquille, Arvind Shah. 3rd World Conference on Photovoltaic Energy Conversion May 11-18.2003 Osaka. Japan. [ 14 ] Chang-Chun Lee, Jacky Huang, Shu-Tong Chang and Wei-Ching Wang, J. Vac. Sci. Technol., 27,3(2009) [ 15 ] Sentaurus user manual [ 16 ] W. A. Brantley, J. Appl. Phys.,44,1(1973) [ 17 ] C.S Smith, Physical Review B,95,42(1954) [ 18 ] M.S. Lundstorm, EDL, 22,293(2001) [ 19 ] 奈米通訊第六卷第二期,降低平面顯示器之工作電壓的新製程 [ 20 ] C. Auth, A. Cappellani,” 45nm High-k + Metal Gate Strain-Enhanced Transistors” Symposium on VLSI Technology Digest of Technical (2008) [ 21 ] S. Yamakawa, S. Mayuzumi,” Study of Stress Effect on Replacement Gate Technology with Compressive Stress Liner and eSiGe for pFETs”, IEEE (2008) [ 22 ] Youn Sung Choi, Toshinori Numata, J. Appl. Phys., 103, 064510 2008 [ 23 ] P. Lengsfeld, N. H. Nickel, Ch. Genzel, and W. Fuhs, J. Appl. Phys. 91, 9128(2002). [ 24 ] S. Higashi, Ph.D. dissertation, Tokyo University of Agriculture and Technology,Chap 3, p. 34, (2001). [ 25 ] T. Krishnamohan, D. Kim, T. V. Dinh, A. T. Pham, B. Meinerzhagen, C.Jungemann, K. Saraswat, IEDM Tech. Dig., 899 (2008). [ 26 ] A. T. Pham, C. Jungemann, B. Meinerzhagen, Solid-State Electronics 52,1437 (2008). [ 27 ] M. V. Fischetti, Z. Ren, P. M. Solomon, M. Yang, K. Rim, J. Appl. Phys. 94,1079 (2003). [ 28 ] Silvaco technical solutions library [ 29 ] Silvaco ATHENA user manual ,2006. [ 30 ] Silvaco ATLAS user manual ,2006. [ 31 ] Miro Zeman, and Janez Kre, Materials Research Society 989, A03-01 (2007) [ 32 ] S.O.Kasap,"Optoelectronics and photonics:principles and practices",pp.256-257,2001. [ 33 ] Semiconductor Devices:Physics and Technology 2nd,S.M.Sze,WILEY,p.321 [ 34 ] “amorphous and microcrystalline silicon solar cells: modeling, materials and device technology” Ruud E.I. Schropp, Miro Zeman [ 35 ] “非晶矽碳氫特性研究” 林維亮,國立台灣大學碩士論文,中華民國七十六年 [ 36 ] “Material and solar cell research in microcrystalline silicon” A.V. Shah, J. Meier,Solar Energy Materials & Solar Cells 78 (2003) 469–491 [ 37 ] Nagasaki shipyard, Machinery works “Microcrystalline High-Efficiency Tandem Solar Cell to Begin Production” Mitsubishi Heavy Industries, Ltd. Technical Review 44, 4 (2007)
摘要: 
本論文分三部分,第一部分探討PMOS不同製程條件或結構下通道內壓縮應力的改變,進而影響載子遷移率及驅動電流。第二部分探討p型TFT元件施加不同外加應力,對驅動電流的影響。第三部分則模擬非晶矽、微晶矽及結合兩者的層疊太陽電池之輸出特性並搭配工研院的量測數據建立出物理模型,最後探討施加應力對光電轉換特性的影響。

This paper divided into three parts. Part one studied the effect of compressive stress in PMOS with different fabricated process and structure. The compressive stress in PMOS channel can improve device mobility and drain current. Part two investigated p-type TFT drain current variation under different tensile stress condition. Part three simulated a-Si, microcrystalline and tandem structure solar cell. We built physic models with experiment data of ITRI. Finally, discuss the photo-electrical translation efficiency under external stress.
URI: http://hdl.handle.net/11455/8896
其他識別: U0005-2206201011511300
Appears in Collections:電機工程學系所

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