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Effects of post-treatments on characteristics of Al-doped zinc oxide thin film
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Granqvist, “Band-gap tailoring of ZnO by means of heavy Al doping”, Physical review B ,37 Number 17. S.A. Campbell, “The Science and Engineering of Microelectronic Fabrication”, 2nd edition, Oxford University Press, 2001. 莊達人, “VLSI製造技術”,高立圖書有限公司,民國96年10月7日六版二刷。 J. Cho, K.H. Yoon, M.S. Oh, W.K. Choi, “Effects of H2 Annealing Treatment on Photoluminescent and Structure of ZnO Al Al2O3 Grown by Radio-Frequency Magnetron Sputtering”, J. The Electrochemical Society, 150 (10) H225-H228 (2003).||摘要:||
由實驗結果得知，在前製程部分，以固定工作壓力5×10-3 torr，沈積功率100 W，300 ℃可得到具有最佳電性表現的AZO薄膜，最低電阻值1.46×10-3 Ω-cm，最高可見光平均穿透率約85 %以上。
濺鍍沈積的薄膜經過氬氫電漿後處理與爐管氬氫氣熱退火處理後，均可使薄膜特性獲得改善，通入氬氣可提昇激發及離子化且氫氣進入薄膜結構中以淺層施體的形式提供自由電子使薄膜載子濃度提高，氧空缺則在後處理過程中因氫原子佔據而減少，因此電性的提升主要由氫離子所提供的淺層施體所貢獻。氬氫氣熱退火後的薄膜因晶格重新排列使結構較緊密，缺陷減少使得電阻值降為1.32×10-3 Ω-cm，經過氬氫電漿處理後可以獲得最佳電阻值為6.25×10-4 Ω-cm。
Aluminum-doped zinc oxide (AZO) thin films were deposited on Corning 1737 glass with RF magnetron sputtering system. We investigated the effects of deposition parameters on the AZO thin films by changing the glass substrate temperature with a background gas Ar. The AZO thin films treated by Ar+H2 (Ratio 1:1)plasma and annealed in Ar+H2 (Ratio 1:1)ambient were also studied. The effects of post treatment of films on electrical characteristics, optical characteristics and structure were investigated.
Based on the experiment results, we obtained the lowest resistivity 1.46×10-3 Ω-cm and average optical transmittance 85 % for the AZO thin films deposited with the RF power of 100 W and the substrate temperature of 300 ℃, Argon gas pressure during deposition was kept at 5×10-3 torr.
In addition, the post treatments of the AZO films by using Ar+H2(Ratio 1:1) plasma in PECVD and Ar+H2(Ratio 1:1) annealing in furnace were investigated. From the two post treatment methods, the resistivity of the films was improved. It is believed that Passes over the argon to be possible promote the stimulation and the ionization moreover hydrogen atoms diffuse into the thin films and play as shallow donors to increase the conductivity of the thin films. The oxygen vacancies were decreased after post-treatment for the reason of the occupation by the hydrogen atoms. After the annealing in Ar+H2(Ratio 1:1) ambient, the structure of thin films formed more tied structure. Due to the reduction of defects, the electrical resistivity can be decrease to 1.32×10-3 Ω-cm. With post hydrogen plasma treatment, the lowest resistivity of 6.25×10-4 Ω-cm.
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