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標題: Fabrication and characteristics of CuSCN solid-state Pb-Sb-S semiconductor-sensitized solar cells
作者: Wei-Zhi Lin
關鍵字: 固態半導體太陽能電池;Solid-stste semiconductor-sensitized solar cells
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本研究主題為固態PbSbS半導體敏化太陽能電池。固態太陽能電池的製程依序為噴霧熱解法合成blocking-layer,接著spin-coating多孔隙TiO2薄膜,接下來以連續離子沉積法,在TiO2表面分別鍍上PbSbS半導體做為敏化劑,最後填充CuSCN,在表面形成over layer並濺鍍金電極。完成後的樣品經過穿透光譜分析能隙,表面輪廓儀量測薄膜厚度,冷場發射掃描電子顯微鏡分析斷面結構,功率轉換效率,分析太陽能電池的光電轉換效率。表現最佳的PbSbS半導體敏化太陽能電池,效率為0.592%,短路電流4.08 mA/cm2,開路電壓0.43V,填充因子33.74%。

This thesis presents the solid-state PbSbS semiconductor-sensitized solar cell. The solid-state solar cell is fabricated layer by layer as below. First, the blocking layer is deposited on FTO by hot-spray method. Then, the mesoporous-TiO2 layer is spin-coated above. Sensitizers are deposited on the mesoporous-TiO2. The hole transport material fill into the mesoporous-TiO2 and form over layer above. Finally the Au electrode is sputtered on over layer as the electron collector. The morphology of the cell is analyzed by field emission scanning electron microscope. The transmission spectrum is characterized by UV-visible spectrophotometer. The thickness of the film is measured by the surface profiler. I-V characteristics are measured by Keithley 2400 source meter. The best PbSbS-sensitized solar cell yields short circuit current of 4.08 mA/cm2, an open circuit voltage of 0.43 V, a fill factor of 33.74% and a power conversion efficiency of 0.592 % under full sun.
Rights: 同意授權瀏覽/列印電子全文服務,2014-08-31起公開。
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