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標題: 摻雜鎂氧化鋅薄膜與奈米柱陣列的特性與可見光感測器的應用
Characteristiecs of Mg-doped ZnO thin Films and nanorods and application on visible sensors
作者: 陳俊翰
Chun-Han Chen
關鍵字: no;醋酸鎂;水熱法;電流變化百分比
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In this thesis, the Zn1-xMgxO films were deposited on Si wafer by the sol-gel spin coating technique and the Zn1-xMgxO nanorods were synthesized on ZnO seed layer by hydrothermal method. The purpose of this research is to explore the substitution effect of smaller Mg ion with same valence of Zn ion in the Zn1-xMgxO films and nanorods on the microstructural, optical and electrical
properties and their application on photo sensors.
From the XRD patterns, the (002) diffraction peaks are gradually shift to higher 2θ angle with the increase of Mg doping content for both Zn1-xMgxO films and nanorods. The reason is that crystal constants decrease as the Zn is substituted by the smaller Mg ion.
The defect analysis is studied by optical the photoluminescence spectra which exhibits a strong UV emission and a weak visible one. With the increase
of Mg content, obvious blue shift of the UV emission is observed as the increase of Mg content for both Zn1-xMgxO films and nanorods. The IVIS / IUV (visible to
UV intensity ratio) decreases with the increase of annealing temperature and Mg concentration of the Zn1-xMgxO films indicating the inhabitation of defect.
However, the opposite result for the Zn1-xMgxO nanorods also denotes the increase of defect as the Mg concentration increase.
The dark and illuminated current-voltage characteristics are measured for the analysis of photo sensor application. For Zn1-xMgxO thin films, the maximum
current variation percentage at 5 V applied bias is 34%. For the Zn1-xMgxO nanords grown on the n-type and p-type silicon substrate, the maximum current variation percentage are 384% and 1591%. Observed from the measured results,the Zn1-xMgxO nanords grown on p-type Si substrate exhibited better performance than the others, which promise the possibility for photo sensor applications.

X 光繞射分析儀的測量顯示,摻雜鎂的薄膜和奈米柱陣列皆有繞射峰往
高角度偏移的現象,且摻雜濃度增加,偏移角度會越大。利用光致螢光光譜儀的量測分析,當掺雜濃度增加,所製備的薄膜在紫外光吸收區有明顯的藍位移。隨著鎂摻雜濃度和退火溫度的增加,薄膜可見光放射峰與紫外光放射峰的比值(IVIS / IUV)逐漸變小。相反的,奈米柱陣列會隨著鎂摻雜濃度的增加,IVIS / IUV 均變大。
對 n 型矽基板上生長掺雜鎂之氧化鋅薄膜量測光電流及暗電流,並計算
34%,而在 n 型矽基板與 p 型矽基板上生長掺雜鎂之氧化鋅奈米柱陣列,其電流變化百分比分別高達 384%與 1591%,以薄膜跟奈米柱的電流變化百分比比較看來,奈米柱在光感測器應用的可能性。
其他識別: U0005-1004201514331400
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