Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/91343
標題: Quantum dots/Silicon nanowire Coaxial Photoelectrode based Dye Sensitized Solar Cells
量子點/矽奈米線同軸光電極之 染料敏化太陽能電池
作者: 謝侑達
You-Da Hsieh
關鍵字: Quantum dots;Sb2S3;silicon nanorod array;coaxial nanorod array photoelectrode;dye-sensitized solar cells;量子點;Sb2S3;矽奈米線陣列;同軸光電極;染料敏化太陽 能電池
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摘要: 
In this study, we propose a novel dye-sensitized solar cells (DSSC)structure. In this new structure, the quantum dot/semiconductor silicon coaxial nanorod array is employed to replace the conventional dye/TiO2/TCO photoelectronde. Top-side illumination is adopted to
replace the backlight input mode. The quantum dot is used to replace dye as the light-absorbing material. The photon excited photoelectrons can be effectively transported to each silicon nanorod then conveyed to the
counter electrode.
The two-stage metal assisted etching (MAE) is adopted for the fabrication of the micro/nano hybrid structure on a silicon substrate. The chemical bath deposition (CBD) method is then used to synthesize Sb2S3 quantum dot on the surface of each silicon nanorod, forming the
photoelectrode of quantum dot/semiconductor silicon (QD/Si) coaxial nanorod array. The synthesized QD/Si coaxial nanorod arrays are characterized suing field emission scanning electron microscope(FE-SEM), X ray spectrometer scattered energy (EDS), X-ray diffraction
analyzer (XRD), and transmission electron microscopy (TEM). A xenon lamp is used to simulate the AM 1.5 G (1000 W/m2) sunlight. The influence of different silicon nanorod array and CBD depositing times on the photoelectric conversion efficiency is investigated.
When a NH (N-type with high resistance) silicon substrate is used,the QD/Si coaxial nanorod array synthesized by three runs of Sb2S3 deposition illustrates the highest photoelectric conversion efficiency of 0.253 %. The corresponding short-circuit current density, open-circuit
voltage, and fill factor are 5.19 mA/cm2, 0.24 V, and 20.33%,respectively.

本論文本研究提出新式之染料敏化太陽能電池(DSSC)結構,以正向照光之方式取代傳統之背光輸入模式,其優點為不需背面透光故可使用非透明之光電極,並以量子點/矽奈米線半導體材料之同軸光電極解決傳統之TCO導電玻璃經過高溫燒結後電阻增大的問題,提昇電子-電洞分離效果與光電轉換效能。而以半導體材料為光電極亦有適合大面積生產之優點。
本論文主要是以化合物半導體量子點Sb2S3取代染料敏化太陽電池中的染料做為吸光材料。本研究採用金屬輔助蝕刻法之兩階段蝕刻,製備出微奈米複合結構之矽奈米線陣列,以化學浴沉積法(CBD)在矽奈米線陣列結構中沉積量子點,經過退火成功的將化合物半導體量子點合成於奈米孔洞內,發展出量子點/矽奈米線之同軸光電極;並利用場發射掃描電子顯微鏡(FE-SEM)、X光能量散譜儀(EDS)、X-ray繞射儀分析儀(XRD)與穿透式電子顯微鏡(TEM)分析,所合成之同軸光電極的結構形貌、成份含量、結晶型態與晶格方向。而太陽電池的性能方面是使用氙燈模擬AM 1.5 G (1000 W/m2)的太陽光量測轉換效率,探討不同矽基板之矽奈米線陣列結構與不同化學浴沉積次數對效率的影響。
在NH矽基板之矽奈米線陣列中,Sb2S3沉積3次所合成的量子點/矽奈米線之同軸光電極,可有最高的光電轉換效率,轉換效率為0.253% 、短路電流密度5.19 mA/cm2、開路電壓0.24 V、填充因子20.33 %。
URI: http://hdl.handle.net/11455/91343
Rights: 同意授權瀏覽/列印電子全文服務,2018-05-11起公開。
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