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標題: 金屬誘發結晶法製備薄膜類結晶矽 及太陽能電池應用可行性研究
Preparation of Thin Film Crystalline Si by Metal Induced Crystallization and Possibility Study for Solar Cell Application
作者: Chih-Hsiang Chang
關鍵字: 多晶矽;鋁誘發;磊晶;aluminum-induced crystallization;epitaxial;poly-crystalline silicon
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本文研究主要目的是利用鋁誘發結晶之方式,將非晶矽薄膜結晶成多晶矽薄膜,並將之應用於太陽能電池元件。本論文分成三個主題,第一個部分為以鋁誘發金屬結晶的方式,將非晶矽薄膜退火誘發結晶成為多晶矽薄膜,並蝕刻薄膜表面之金屬薄膜,藉由 Raman、XRD 與霍爾量測等方式
種層,在上方磊晶上 P 型與本質的矽薄膜,並使用拉曼分析其磊晶薄膜與非晶矽薄膜之結晶比例的差異,並研究矽薄膜之氫稀釋比與厚度對於磊晶過程中的影響,最後一部分以磊晶之結果製作兩種結構之太陽能電池,並以 I-V 量測探討此兩種結構間之效果差異,以及該多晶矽薄膜應用於太陽能電池元件的潛力與可行性。

In this work, we investigate the influence of seed layer which is made by means of aluminum induced crystallization on effect of crystalline fraction, and
the solar cell’s efficiency. The Si in the PIN solar cell on seed layer was expected to have higher crystalline fraction that will alleviate Stabler-Wronski
effect in a thin film Si solar cell.
The seed layer was made by aluminum induced crystallization. In the process of aluminum induced crystallization, an etching solution was used for
removing aluminum from the surface of poly-crystalline silicon which annealed in furnace. Investigate to the influence of annealing temperature and
oxidation duration on seed layer.In this part, using Hall measurements to determine the suitable conditions to make seed layer.The conditions were
annealing temperature 450 ℃and oxidation duration 2 hours.
Following, we deposite p-type and intrinsic silicon on the seed layer by PECVD. And intrinsic silicon obtained 25.69 % of the crystallization fraction
enhancement.Design two structures of solar cell device to investigate the difference and discuss the potential and feasibility of the application to solar
cell by I-V. The efficiency of Structure A solar cell on seed layer was 0.511 % and largest short circuit density was 5.856 mAcm-2.
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