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標題: 以熱化學氣相沉積法製備碳薄膜之機制及其搭配遠端電漿應用在製備石墨烯之研究
Kinetics of carbon films deposition using thermal chemical vapor deposition and its application on graphene synthesis through adding remote plasma
作者: 賴良訓
Liang-Hsun Lai
關鍵字: 動力學;化學氣相沉積;石墨烯;Kinetics;Chemical vapor deposition;Graphene
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In thermal chemical vapor deposition (CVD) process, the characteristics of obtained pyrolytic carbon films are influenced by many factors including the precursor gas, mass flow rate of inlet gas, deposition temperature, and working pressure. Therefore, kinetics of thermal CVD of pyrolytic carbon films using CH4/N2, C2H2/N2, C2H4/N2, CH4/NH3, C2H2/NH3, and C2H4/NH3 are acquired. During the deposition process, a residual gas analyzer is used to measure the partial pressures of residual gases. Among these mixtures, the deposition rate of using C2H4/NH3 mixture is the largest one, therefore, its activation energy is also lower than those of the rest. On the other hand, the deposition rate of using C2H2/N2 mixture is the smallest one, and thus, its activation energy is larger than those of the rest. The precursor gas N2 only serves as the dilute gas in the thermal CVD processes. Notably, NH3 acts as both etcher and competing adsorber, which produces the suppressing effect. Moreover, it was found that the amount of contaminants in the outlet of thermal CVD system using CH4 is small; the amount of contaminants in the outlet of thermal CVD system using C2H4 is moderate, and the amount of contaminants in the outlet of thermal CVD system using C2H2 is large. In CVD process, hydrogen is a necessary precursor gas for graphene synthesis. Nevertheless, hydrogen is ease to leak and combustible, so its safety must be concerned. Therefore, a relatively safe technique of graphene synthesis is proposed in this study. Alternatively, the multi-layer graphene is successfully fabricated using thermal CVD enhanced with remote inductively coupled plasma system. However, the quality and uniformity of the obtained graphene are still need to be improved.

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