Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/92045
標題: 熱化學氣相沉積法應用於碳薄膜的製備及石墨烯的合成
Thermal chemical vapor deposition applied on preparation of carbon thin films and graphene synthesis
作者: 張芷菱
Chih-Ling Chang
關鍵字: 熱化學氣相沉積;石墨烯;熱裂解碳;感應耦合電漿;Thermal chemical vapor deposition;graphene;pyrolytic carbon;inductively coupled plasma
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摘要: 
There are two parts we investigated in this study. The effects of C2H6/(C2H6+Ar) ratio on the properties of carbon films prepared by thermal chemical vapor deposition. We also discuss the effects of mass flow rate, deposition temperature and working pressure on the deposition rates of carbon films. Another part we investigated the properties of n-type graphene prepared by plasma enhanced chemical vapor deposition using CH4、NH3、H2 and Ar as precursor gas. And discuss the effects of different rf-powers on the quality of graphene.
The thickness, microstructure, surface property, electrical property of carbon films and residual gas of process were investigated by field emission scanning electron microscopy, X-ray diffraction spectrometer, Raman scattering spectrometer, X-ray photoelectron spectrometer, atomic force microscopy, four-points probe, and residual gas analyzer. Residual gases analysis results reveal that the main species in the gas phase contain H2, C2H2, C2H3, and C2H4. Experimental results also indicate that the deposition rate raises with increasing C2H6/(C2H6+Ar) ratio, residence time, deposition temperature, and working pressure. Finally, the results of thermal CVD carbon deposition using C2H6/Ar mixtures are compared with that using CH4/N2, C2H2/N2, C2H4/N2, and C3H8/N2 mixtures.Another part we use Raman scattering spectrometer to determine the number and quality of graphene and discuss the effects of adding plasma. The results indicate that the single layer graphene can successfully be prepared at the radio frequency 50W and 100W. But with increasing the radio frequency power, the more defective multi-layer graphene were prepared.

本篇論文主要分為兩部份,以熱化學氣相沉積法製備碳薄膜,並探討不同乙烷/氬氣比例、沉積溫度、工作壓力及總氣體流量對碳薄膜性質之影響;另一部分為利用熱化學氣相沉積系統搭配遠端電漿以甲烷、氨氣、氫氣及氬氣作為前驅氣體製備n型石墨烯,探討不同射頻功率對其品質影響。
在本實驗第一部份碳薄膜性質探討分別利用殘留氣體分析儀、X光繞射儀、拉曼散射光譜儀、X光光電子能譜儀、原子力顯微鏡及四點探針儀來分析製程上的殘留氣體、碳薄膜的沉積厚度、微觀結構、表面特性與電學性質。由殘留氣體分析結果可知,氣相中的主要產物包含了H2、C2H2、C2H3和C2H4。研究結果發現,碳薄膜的沉積速率隨著C2H6/(C2H6+Ar) 比例增加、停留時間、沉積溫度以及工作壓力的增加而上升。最後,將本實驗乙烷/氬氣與甲烷/氮氣、乙炔/氮氣、乙烯/氮氣和丙烷/氮氣之碳薄膜性質互相比較。本實驗第二部份石墨烯則是利用拉曼散射光譜儀量測以判斷其層數及品質並探討加入電漿之影響。由結果可知,在射頻功率50瓦及100 瓦的拉曼結果顯示石墨烯的特性峰值2D-band較明顯,為品質較好的單層石墨烯;而隨著射頻功率再增加則會獲得缺陷較多、品質不佳的少層石墨烯。
URI: http://hdl.handle.net/11455/92045
其他識別: U0005-2606201512553600
Rights: 同意授權瀏覽/列印電子全文服務,2018-07-08起公開。
Appears in Collections:材料科學與工程學系

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