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標題: 鎳/鈦/矽及鎳/鉬/矽之生成相及應力變化
Stress evolution of Ni/Ti/Si and Ni/Mo/Si reaction system
作者: 楊然翔
關鍵字: silicide;矽化物;nickel silicide;Ti interlayer;Mo interlayer;stress;鎳矽化物;鈦中間層;鉬中間層;應力
出版社: 材料工程學研究所

With the improvement of the semiconductor technology, the devices can be scaled down to deep-submicron dimensions. The increases of the parasitic source/drain resistance and the contact resistance become important issues. Silicides are employed to solve theses problems. Among all silicides, NiSi is a possible candidate for future application, due to its low resistivity, lower silicon consumption, and no linewidth dependence of the sheet resistance. However, NiSi is not a stable phase and will transform into NiSi2, which has high resistivity, at temperatures over 750℃.
In this experiment, we introduced an interlayer (Ti or Mo) to study if it can inhibit the phase transformation (NiSièNiSi2). During isochronal annealing, we used a scanning laser method to measure the in-situ curvature changes and obtained the F/W evolution of the specimens. After annealing, specimens were analyzed using x-ray diffractometer (XRD) to determine the phases in the films. Four-point probe was used to determine the sheet resistance, and the atom redistribution was characterized by depth profiling of the Auger electron spectroscopy (AES).
The results show that the evolution of the F/W will move in tensile and compressive direction for the formation of NiSi and NiSi2, respectively. Compared to the Ti interlayer, the phase transformation of NiSi to NiSi2 occurred at a higher temperature for samples with Mo interlayer. Meanwhile, the sheet resistance of the NiSi remains low for the samples with Mo interlayer. In conclusion, Mo is a more proper interlayer material than Ti.
Appears in Collections:材料科學與工程學系

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