Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/93877
標題: Origin of Noise in Layered MoTe₂ Transistors and its Possible Use for Environmental Sensors
作者: Lin, Yen-Fu
Xu, Yong
Lin, Che-Yi
Suen, Yuen-Wuu
Yamamoto, Mahito
Nakaharai, Shu
Ueno, Keiji
Tsukagoshi, Kazuhito
關鍵字: MoTe2;low-frequency noise;nanoscale electronics;random telegraph signals;transition metal dichalcogenides
Project: Advanced materials (Deerfield Beach, Fla.), Volume 27, Issue 42, Page(s) 6612-9.
摘要: 
Low-frequency current fluctuations are monitored and the mechanism of electric noise investigated in layered 2H-type α-molybdenum ditelluride transistors. The charge transport mechanism of electric noise in atomically thin transition-metal dichalcogenides is studied under different environments; the development of a new sensing functionality may be stimulated.
URI: http://hdl.handle.net/11455/93877
DOI: 10.1002/adma.201502677
Appears in Collections:物理學系所

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