Please use this identifier to cite or link to this item:
|標題:||Selective breakdown of metallic pathways in double-walled carbon nanotube networks||作者:||Ng, Allen L
Lee, Cheng S
|關鍵字:||double-walled carbon nanotubes;electrical breakdown;sorting;surface chemistry;transistors;Benzene;Electricity;Metals;Nanotubes, Carbon;Time Factors;Transistors, Electronic||Project:||Small (Weinheim an der Bergstrasse, Germany), Volume 11, Issue 1, Page(s) 96-102.||摘要:||
Covalently functionalized, semiconducting double-walled carbon nanotubes exhibit remarkable properties and can outperform their single-walled carbon nanotube counterparts. In order to harness their potential for electronic applications, metallic double-walled carbon nanotubes must be separated from the semiconductors. However, the inner wall is inaccessible to current separation techniques which rely on the surface properties. Here, the first approach to address this challenge through electrical breakdown of metallic double-walled carbon nanotubes, both inner and outer walls, within networks of mixed electronic types is described. The intact semiconductors demonstrate a ∼62% retention of the ON-state conductance in thin film transistors in response to covalent functionalization. The selective elimination of the metallic pathways improves the ON/OFF ratio, by more than 360 times, to as high as 40 700, while simultaneously retaining high ON-state conductance.
|Appears in Collections:||生醫工程研究所|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.