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dc.contributor.advisorTsai Cho Jenen_US
dc.contributor.authorYu, Kun Hoen_US
dc.description.abstract金屬矽化物已廣汎用於高速深次微米之CMOS元件,做為金屬接觸、閘 極電極、元件內連線之用。而NiSi是一值得考慮的自行對準矽化製程材料 ,因其有應力低、電阻率低、形成溫度(>375oC)低、矽的消耗量少、熱穩 定範圍寬(375-811oC)、及片電阻不因線寬變窄而受相變限制等優點。於 本篇論文中,我們在真空退火同時以In situ雷射掃瞄的曲率量測方法研 究鎳矽化物之生成相及其應力變化。 對於Ni(100nm)/Si試片而言,以 固定5oC/min的升溫速率遞增溫度,則Ni->Ni2Si->NiSi->NiSi2依序形成 ;且高溫退火時觀察到曲率變化有三個陡峭轉折點,其中第一(328oC)及 第二(375oC)轉折點分別代表Ni2Si及NiSi相變完全。而根據不同持溫溫度 及生成相的反應時間,繪出Arrhenius圖,得到NiSi的活化能為1.53eV; 根據不同升溫速率及生成相的反應溫度,以似Kissinger的分析方法得到 Ni2Si、NiSi及NiSi2的活化能分別為1.81、1.55及3.42eV。對於含氧的 Ni(100nm)/Si試片來說,氧抑制Ni2Si及NiSi的形成,故曲率變化只有一 個(470oC)很寬緩的的轉折。 另外,也研究Pd的作用[Ni(100nm/Pd(10 nm)/Si)],發現Pd抑制Ni2Si且延遲NiSi及NiSi2的形成;高溫退火的曲率 變化形態則稍異於Ni/Si試片,有兩個陡峭(268oC、420oC)及一寬緩(562 oC)轉折點。zh_TW
dc.description.abstractMetal silicides have been widely used as ohmic contacts, gate electrodes, and interconnects in high-speed deep submicron CMOS devices. NiSi is a possible candidate as next generation silicide material due to its low stresses, low resistivity, low formation temperatures (>375oC), little silicon consumption, extended thermal stability range (375-811oC), and no linewidth dependence of the sheet resistance. In this thesis, the evolution of stresses was studied using in situ curvature measurements with scanning laser method during isochronal annealing in a vacuum with pressure better than 3*10-6 Torr. For Ni(100nm)/Si samples, the phase sequence of Ni->Ni2Si-> NiSi->NiSi2 occurs with increased annealing temperatures at a constant ramping rate, 5oC/min. We observed three apparent valleys in the curvature-to-temperature plot. In this case, the first (328oC) and the second (375oC) valleys were identified to be completely transformed phases of Ni2Si and NiSi, respectively. According to Arrhenius plot of the duration for a specific phase transformation at various annealing temperatures, the activation energy was determined to be 1.53eV for NiSi formation. The activation energies determined by Kissinger-like analysis based on the various ramp rates ranging from 1oC/min to 30oC/min were 1.81, 1.55 and 3.42eV for Ni2Si, NiSi and NiSi2 formation, respectively. For Ni(100nm)/Si samples with measurable oxygen impurity at Ni/Si interfaces, the formation temperature for Ni2Si and NiSi were retarded. Therefore, there was only one (470oC) broad valley in the curvature-to- temperature plot. The effect of a thin Pd layer between Ni film and Si substrate on the silicidation process includes changing the formation sequence of the nickel silicide and retarding the transformation of Ni2Si from NiSi. The curvature-to-temperature plots for samples with thin Pd layers were different from those without thin Pd layers. Two steep valleys (268oC and 420oC) and one broad valley (562oC) were observed. The 420oC valley was identified to be associated with formation of NiSi.en_US
dc.titleStudy of Nickel-Silicon Reaction by In Situ Stress Measurementen_US
dc.typeThesis and Dissertationzh_TW
item.openairetypeThesis and Dissertation-
item.fulltextno fulltext-
Appears in Collections:材料科學與工程學系
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