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標題: 控制氣氛下退火對銅基材上氮化鈦鍍膜微結構之影響
Characteriazation of TiN Films on Cu Substrate After Annealing under Controlled Atmosphere
作者: 陳弘穎
Chen, Hung Ying
關鍵字: annealing;退火;copper;titanium nitride;銅;氮化鈦
出版社: 材料工程學研究所
譜中的Ti 2p、N 1s及O 1s結果顯示在鍍膜的表面上存在非晶質的TiO2及
Ti 2p、N 1s及O 1s能譜顯示鍍膜表面形成TiNxOy。而經空氣400C、500C
儀中的Ti 2p、N 1s及O 1s能譜顯示,在鍍膜的表面形成TiNxOy的化合物
。在700C, CO2/N2/H2=10:81:9的氣氛下退火處理6小時後,鍍膜的顏色改
變為藍色,經X光光電能譜儀中的Ti 2p、N 1s及O 1s能譜顯示,在鍍膜的
表面形成TiO2及TiNxOy。而在640C, N2/H2=9氣氛下退火處理2小時後,鍍
膜表面顏色未改變,經X光光電能譜儀中的Ti 2p、N 1s及O 1s能譜顯示,

In this study, the TiN films were deposited on Cu substrates
by the cathodic arc plasma dposition technique. The grazing
incidenceX-ray diffraction results showed that the films possess
a rock-saltcrystal structure. The results of Auger electron
spectroscopyshowed that the atomic concentration ratio of Ti and
N was smaller than 1. Thin amorphous TiO2 and TiNxOy layers
werefound by analyzing the Ti-2p, N-1s and O-1s spectra of the
X-ray photoelectron spectroscopy (XPS). The preferred
orientation of TiN films for various deposition times were found
to change from(200) [5 min], (111) [10 min] to (220) [both for
30 min and 60 min]. The results of XPS showed that the TiNxOy
layer was formed on the TiN films surface after annealing the
films in air for 2 hr at 300 degree C,N2 and Ar for 2 hr at 500
C, and in N2/H2=9 for 3 hr at 640 degree C. The colorof the
films were not changed. After annealing in air for 2 hr both at
400 degree C and 500 degree C as well as in CO2/N2/H2=10:81:9
for 6 hr at 700 degree C, both TiO2 and TiNxOy layers were found
on the TiN films surface. The color of the of films changed into
blue, pink and blue. From the results, we conclude that the
color of the on TiN films remain unchangedafter annealing due to
is the formation of TiNxOy while the color change is due to the
formation of TiO2 and TiNxOy on the sample surface. Both voids
and macropartilces on the TiN surface were investigatedby using
the scanning electron microscopy and optical microscopy. The
macroparticles contain mainly the Ti element and not leave
thesurface after annealing in air, N2, Ar, N2/H2=9 at 300 degree
C~640 degree C for 2 hr.
Appears in Collections:材料科學與工程學系

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