Please use this identifier to cite or link to this item:
標題: Controlling the stress of growing GaN on 150-mm Si (111) in an AlN/GaN strained layer superlattice
作者: Po-Jung Lin
Shih-Yung Huang
Wei-Kai Wang
Che-Lin Chen
Bu-Chin Chung
Dong-Sing Wuu
關鍵字: Stresses;Superlattice;Metalorganic chemical vapor deposition;Nitrides;Semiconducting III-V materials
Project: Applied Surface Science, Volume 362, 30 January 2016, Pages 434-440
For growing a thicker GaN epilayer on a Si substrate, generally, a larger wafer bowing with tensile stress caused by the mismatch of thermal expansion coefficients between GaN and Si easily generates a cracked surface during cool down. In this work, wafer bowing was investigated to control stress by changing the thickness of a GaN layer from 18.6 to 27.8 nm in a 80-paired AlN/GaN strained layer superlattice (SLS) grown on a 150-mm Si (111) substrate. The results indicated that wafer bowing was inversely proportional to the total thickness of epilayer and the thickness of the GaN layer in the AlN/GaN SLS, since higher compressive stress caused by a thicker GaN layer during SLS growth could compensate for the tensile stress generated during cool down. After returning to room temperature, the stress of the AlN/GaN SLS was still compressive and strained in the a-axis. This is due to an unintended AlGaN grading layer was formed in the AlN/GaN SLS. This AlGaN layer reduced the lattice mismatch between AlN and GaN and efficiently accumulated stress without causing relaxation.
Appears in Collections:材料科學與工程學系

Files in This Item:
File Description SizeFormat Existing users please Login
1-s2.0-S0169433215029335-main.pdf3.17 MBAdobe PDFThis file is only available in the university internal network    Request a copy
Show full item record

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.