Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/95505
標題: A Three-Axis Magnetic Field Microsensor Fabricated Utilizing a CMOS Process
作者: Jian-Zhi Tseng
Po-Jen Shih
Cheng-Chih Hsu
戴慶良
Ching-Liang Dai
關鍵字: magnetic field sensor;magnetotransistor;CMOS process;MEMS
出版社: APPLIED SCIENCES-BASEL
Project: Applied Sciences 2017, 7(12), 1289
摘要: 
This study develops a three-axis magnetic field (MF) microsensor manufactured by a complementary metal oxide semiconductor (CMOS) process. The MF microsensor contains a ring emitter, four bases, and eight collectors. Sentaurus TCAD was used to simulate the microsensor characterization. The STI (shallow trench isolation) oxide in the process was used to limit the current direction and reduce leakage current. The microsensor produces a voltage difference once it senses a magnetic field. An amplifier circuitry magnifies voltage difference into a voltage output. Experiments reveals that the MF microsensor has a sensitivity of 1.45 V/T along the x-axis and a sensitivity of 1.37 V/T along the y-axis.
URI: http://hdl.handle.net/11455/95505
DOI: 10.3390/app7121289
Appears in Collections:機械工程學系所

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