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|標題:||A Stress Response Model for Hole Mobility in the Inversion Layer of Ge MOSFETs||作者:||Chen, Kuan-Ting
|關鍵字:||Piezo-Resistance Model;Mobility;Ge||出版社:||JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY||Project:||Journal of Nanoscience and Nanotechnology, Volume 17, Number 11, November 2017, pp. 8511-8515(5)||摘要:||
Hole-mobility calculation and a new piezo-resistance model for strained Ge PMOSFETs are presented. The piezo-resistance model is based on nine stress-independent piezo-resistance coefficients and takes into account the symmetry reduction compared with bulk Ge. The piezo-resistance coefficients are determined by Kubo–Greenwood mobility calculation for six particular stress configurations with a maximum stress level of 2 GPa. Finally, comparisons between Kubo–Greenwood mobility formula and the new piezo-resistance model for general stress configurations show a good agreement, thus validating this new approach.
|Appears in Collections:||電機工程學系所|
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