Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/95542
標題: A Stress Response Model for Hole Mobility in the Inversion Layer of Ge MOSFETs
作者: Chen, Kuan-Ting
Lee, Chia-Feng
He, Ren-Yu
張書通
Chang, Shu-Tong
關鍵字: Piezo-Resistance Model;Mobility;Ge
出版社: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Project: Journal of Nanoscience and Nanotechnology, Volume 17, Number 11, November 2017, pp. 8511-8515(5)
摘要: 
Hole-mobility calculation and a new piezo-resistance model for strained Ge PMOSFETs are presented. The piezo-resistance model is based on nine stress-independent piezo-resistance coefficients and takes into account the symmetry reduction compared with bulk Ge. The piezo-resistance coefficients are determined by Kubo–Greenwood mobility calculation for six particular stress configurations with a maximum stress level of 2 GPa. Finally, comparisons between Kubo–Greenwood mobility formula and the new piezo-resistance model for general stress configurations show a good agreement, thus validating this new approach.
URI: http://hdl.handle.net/11455/95542
DOI: 10.1166/jnn.2017.15149
Appears in Collections:電機工程學系所

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