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|標題:||Electron Mobility Calculation for Monolayer Transition Metal Dichalcogenide Alloy Using Tight-Binding Band Structure||作者:||Chen, Kuan-Ting
|關鍵字:||Monolayer TMD Alloy;Mo1−xWxS2;Tight-Binding Model;Modified Effective Mass Approximation||出版社:||JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY||Project:||Journal of Nanoscience and Nanotechnology, Volume 17, Number 11, November 2017, pp. 8516-8521(6)||摘要:||
Owing to the unique electronic properties of its atomically thin two-dimensional layered structure, a monolayer transition metal dichalcogenide (TMD) alloy can be formed into an energy-saving metal-oxide-semiconductor field-effect transistor. This work focuses on analytical physical models used for electron mobility calculations of atypical monolayer TMD alloy, such as Mo1−x W x S2. The tight-binding (TB) model is used to calculate the band structure for Mo1−x W x S2 and a modified effective-mass-approximation compact band model is proposed to fit the TB result. With information about the compact band model, analytical models can be obtained for the density of states and square of the group velocity. The impact of alloy scattering and phonon scattering on the electron mobility of Mo1−x W x S2 is investigated.
|Appears in Collections:||電機工程學系所|
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