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A Study of the Characteristics of Nickel Oxide Thin Films for Use in Scattering-type Super-resolution Near-Field Structure Disc
The non-stoichiometric NiOx would be expected to decompose into Ni and O2 under pulsed laser irradiation once the temperature at NiOx films is higher than its thermal decomposition temperature. Thus, it NiOx film could be adopted as a mask layer for use in the super-resolution near-field structure (super-RENS) disk. In this study, we investigated the constituent phase, microstructure, thermal decomposition behavior and optical property of the reactively sputtered NiOx films, prepared at various oxygen flow ratios of O2/(O2+Ar), with and without ZnS-SiO2 protective layers to evaluate the possibility of NiOx film for use in the super-RENS disks, and propose the possible recording and readout mechanisms.
The results showed that the as-deposited NiOx films prepared at various oxygen flow ratios consisted only NiO phase. As the NiOx films were heated to 600℃, the thermal decomposition of NiOx did not occur. Under the protection of ZnS-SiO2 layers, the as-deposited NiOx films prepared at various oxygen flow ratios still consisted only NiO phase. However, the NiOx films were found to decompose into Ni and O2 at around 300~330℃, as the NiOx films were heated to 600℃. It was found that the transmittance of ZnS-SiO2/NiOx/ZnS-SiO2 multilayers with NiOx films prepared at higher oxygen flow ratios would significantly increase so that those NiOx films could be adopted as a mask layer for the super- RENS disk. During the recording process, Ni and O2 are generated in the center region of the laser spot through the thermal decomposition of NiOx. The decomposed Ni would diffuse outward from the center region, and a permanent aperture will be created. During the readout process, the permanence aperture can reduce the laser spot size effectively, leading to the super resolution effect. As the distance between NiOx mask layer and recording layer is much smaller than the wavelength of readout laser, the near-field coupling effect is also expected to occur. The combination of super resolution and near-field coupling effects can successfully retrieve the small recording marks beyond the diffraction limit.
|Appears in Collections:||材料科學與工程學系|
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