Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/95785
標題: Exchange bias study of sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays fabricated by nanosphere lithography
作者: X. Li
C.W. Leung
C.-C. Chiu
林克偉
K.-W. Lin
Mansun Chan
Y. Zhou
Philip W.T. Pong
關鍵字: Exchange bias;Nanostructures;Nanosphere lithography
出版社: PHYSICS LETTERS A
Project: Physics Letters A, Volume 381, Issue 33, 5 September 2017, Pages 2709-2714
摘要: 
Exchange-coupled bilayers are widely used as pinned layers in nanometric spintronic devices. In this work, sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays were patterned by nanosphere lithography. The exchange bias () and coercivity () of the nanostructures and continuous films exhibit similar exponential dependence on CoFeB layer thickness. Magnetic field annealing results in changed crystallinity, surface roughness, and magnetic properties. Reduced and enhanced are observed after annealing at low temperatures, while high-temperature annealing results in higher and lower . This work provides physical insights on the magnetization reversal response in nanosized spintronic devices involving CoFeB/IrMn reference layers.
URI: http://hdl.handle.net/11455/95785
DOI: 10.1016/j.physleta.2017.06.010
Appears in Collections:材料科學與工程學系

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