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|標題:||Exchange bias study of sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays fabricated by nanosphere lithography||作者:||X. Li
Philip W.T. Pong
|關鍵字:||Exchange bias;Nanostructures;Nanosphere lithography||出版社:||PHYSICS LETTERS A||Project:||Physics Letters A, Volume 381, Issue 33, 5 September 2017, Pages 2709-2714||摘要:||
Exchange-coupled bilayers are widely used as pinned layers in nanometric spintronic devices. In this work, sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays were patterned by nanosphere lithography. The exchange bias () and coercivity () of the nanostructures and continuous films exhibit similar exponential dependence on CoFeB layer thickness. Magnetic field annealing results in changed crystallinity, surface roughness, and magnetic properties. Reduced and enhanced are observed after annealing at low temperatures, while high-temperature annealing results in higher and lower . This work provides physical insights on the magnetization reversal response in nanosized spintronic devices involving CoFeB/IrMn reference layers.
|Appears in Collections:||材料科學與工程學系|
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