Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/95785
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dc.contributor.authorX. Lizh_TW
dc.contributor.authorC.W. Leungzh_TW
dc.contributor.authorC.-C. Chiuzh_TW
dc.contributor.author林克偉zh_TW
dc.contributor.authorK.-W. Linzh_TW
dc.contributor.authorMansun Chanzh_TW
dc.contributor.authorY. Zhouzh_TW
dc.contributor.authorPhilip W.T. Pongzh_TW
dc.date2017-06-12-
dc.date.accessioned2018-10-12T05:18:04Z-
dc.date.available2018-10-12T05:18:04Z-
dc.identifier.urihttp://hdl.handle.net/11455/95785-
dc.description.abstractExchange-coupled bilayers are widely used as pinned layers in nanometric spintronic devices. In this work, sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays were patterned by nanosphere lithography. The exchange bias () and coercivity () of the nanostructures and continuous films exhibit similar exponential dependence on CoFeB layer thickness. Magnetic field annealing results in changed crystallinity, surface roughness, and magnetic properties. Reduced and enhanced are observed after annealing at low temperatures, while high-temperature annealing results in higher and lower . This work provides physical insights on the magnetization reversal response in nanosized spintronic devices involving CoFeB/IrMn reference layers.zh_TW
dc.language.isoen_USzh_TW
dc.publisherPHYSICS LETTERS Azh_TW
dc.relationPhysics Letters A, Volume 381, Issue 33, 5 September 2017, Pages 2709-2714zh_TW
dc.relation.urihttps://www.sciencedirect.com/science/article/pii/S0375960116322307zh_TW
dc.subjectExchange biaszh_TW
dc.subjectNanostructureszh_TW
dc.subjectNanosphere lithographyzh_TW
dc.titleExchange bias study of sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays fabricated by nanosphere lithographyzh_TW
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1016/j.physleta.2017.06.010zh_TW
item.grantfulltextrestricted-
item.openairetypeJournal Article-
item.languageiso639-1en_US-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
item.fulltextwith fulltext-
Appears in Collections:材料科學與工程學系
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