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標題: 射頻磁控濺鍍二氧化錫薄膜之微結構與光電性質研究
Microstructure, Electrical, and Optical Properties of SnO2-X Thin Films Prepared by RF Magnetron Sputtering
作者: 楊馥如
Yang, Fu-Ju
關鍵字: RF reactive magnetron sputtering;射頻磁控濺鍍法;Tin Dioxide;Microstructure;二氧化錫;微結構
出版社: 材料工程學研究所

Tin oxide (SnOx) thin films were prepared on glass and Si substrates by rf magnetron sputtering under different O2/(Ar+O2) ratios, rf power, deposition time and N2/O2 ratios. Atomic force microscopy (AFM), X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and electron spectroscopy for chemical analysis (ESCA) were used to characterize the microstructure of the films. UV/Visible spectrophotometer and Hall Effect measurement were employed to measure the optical and electrical properties of the films.
It shows that a change of the O2/(Ar+O2) ratio from 20% to 30%, the crystal structure of the films changes from SnO to SnO2, with (101) preferred orientation. While increasing the RF power, the preferred orientation plane of SnO2 changes to the lowest energy plane (110). Minimum electric resistivity 3.7×10-3 Ω-cm and high transmittance 95% in the visible regime are obtained for the films deposited at O2/(Ar+O2) ratio 30% and RF power of 60W, which be used as transparent conductive thin films.
Appears in Collections:材料科學與工程學系

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