Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/9580
標題: 射頻磁控濺鍍二氧化錫薄膜之微結構與光電性質研究
Microstructure, Electrical, and Optical Properties of SnO2-X Thin Films Prepared by RF Magnetron Sputtering
作者: 楊馥如
Yang, Fu-Ju
關鍵字: RF reactive magnetron sputtering;射頻磁控濺鍍法;Tin Dioxide;Microstructure;二氧化錫;微結構
出版社: 材料工程學研究所
摘要: 
本研究以射頻磁控濺鍍法於矽晶片與玻璃上沈積二氧化錫(SnO2)薄膜,探討改變氧氬流量比、射頻功率、沈積時間與氮氧流量比等參數,藉由原子力顯微鏡、X光繞射分析、場發射掃瞄式電子顯微鏡、穿透式電子顯微鏡、化學分析電子儀分析微結構的差異,及紫外線/可見光光譜儀與霍爾效應量測光電性質,以瞭解製程參數對薄膜微結構與光電性質的影響。
實驗結果顯示,改變氧氬流量比20%至30%時,薄膜的結晶結構由SnO轉變至SnO2,薄膜呈現(101)擇優取向,且擁有較佳的光電性質。隨著射頻功率的增加,薄膜呈現(110)擇優取向。當沈積時間越長,越能得到結晶性良好的SnO2薄膜。在不同參數下所沈積的薄膜,光電性有不同程度的改變,其中在射頻功率60W下,薄膜具有最低的電阻率3.7×10-3(Ω-cm)與可見光平均穿透率為95%,是良好的透明導電薄膜。

Tin oxide (SnOx) thin films were prepared on glass and Si substrates by rf magnetron sputtering under different O2/(Ar+O2) ratios, rf power, deposition time and N2/O2 ratios. Atomic force microscopy (AFM), X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and electron spectroscopy for chemical analysis (ESCA) were used to characterize the microstructure of the films. UV/Visible spectrophotometer and Hall Effect measurement were employed to measure the optical and electrical properties of the films.
It shows that a change of the O2/(Ar+O2) ratio from 20% to 30%, the crystal structure of the films changes from SnO to SnO2, with (101) preferred orientation. While increasing the RF power, the preferred orientation plane of SnO2 changes to the lowest energy plane (110). Minimum electric resistivity 3.7×10-3 Ω-cm and high transmittance 95% in the visible regime are obtained for the films deposited at O2/(Ar+O2) ratio 30% and RF power of 60W, which be used as transparent conductive thin films.
URI: http://hdl.handle.net/11455/9580
Appears in Collections:材料科學與工程學系

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