Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/9623
標題: 以低溫水熱法及化學電池作用於氮化鈦膜上製備鈦酸鋇膜之研究
Synthesis of barium titanate film on TiN-coated silicon by low temperature hydrothermal and galvanic couple methods
作者: 余錦智
C.-C.Yu
關鍵字: BaTiO3;鈦酸備;TiN;low temperature hydrothermal;galvanic couple techniques;氮化鈦;低溫水熱法;化學電池作用
出版社: 材料工程學研究所
摘要: 
本研究主要採用以往文獻中未曾使用之氮化鈦(TiN)膜/Si來當基材,利用低溫水熱法直接浸泡及化學電池作用方式來成長鈦酸鋇薄膜,反應溶液為0.5 M醋酸鋇(Ba(CH3COO)2‧H2O)及2 M氫氧化鈉(NaOH)之電解液,探討在控制溶液溫度及反應時間之條件對鈦酸鋇膜成長之影響。
XRD結晶分析結果顯示,以低溫水熱及化學電池技術均可沿TiN/Si之優選方向(111)與(200)生成具高優選方向(111)與(200)之立方相鈦酸鋇薄膜。另外,以化學電池法亦可於Ti(002)/Si基材上製備出具(211)之優選方向之立方相鈦酸鋇薄膜。
TiN/Si於水熱法直接浸泡下,80℃浸泡5分鐘或60℃浸泡2小時,則開始產生零散分佈之立方相之鈦酸鋇顆粒,而於80℃浸泡2小時以上,則可形成鈦酸鋇膜。在化學電池作用於80℃反應1分鐘時及50℃反應2小時下,即有鈦酸鋇產生,且於80℃反應1小時以上已成長為一緻密之鈦酸鋇膜,故在相同條件下,以化學電池方式成長鈦酸鋇膜之速率明顯比水熱浸泡法要來的快,其生成厚度相差約20~26%。另於化學電池作用上,TiN/Si成長鈦酸鋇之速率亦明顯較Ti/Si快,成長厚度亦較厚。
此外,本研究製備鈦酸鋇方式於水熱法直接浸泡及化學電池作用製備鈦酸鋇薄膜,皆可有效避免以往文獻中以水熱或電化學法成長鈦酸鋇時,產生碳酸鋇污染之問題,此對未來工業化應用亦有相當之幫助。

The objective of this research is to synthesize BaTiO3 on titanium nitride-coated Si using novel low temperature hydrothermal and galvanic couple techniques. A mixed solution of 0.5 M barium acetate (Ba(CH3COO)2H2O) and 2 M sodium hydroxide (NaOH) was employed as electrolyte to investigate influences of temperatures of the electrolyte and the reaction time on the growth BaTiO3 films.
XRD results reveal that both low temperature hydrothermal and galvanic couple techniques could be used to successfully prepare cubic BaTiO3 films with highly preferred orientation, which depended on the crystallized orientation of TiN/Si substrate. Furthermore, the BaTiO3 films with (211) preferred orientation can be observed on the Ti(002)/Si substrate by galvanic couple techniques.
A finely dispersed cubic phase BaTiO3 particles could be found after hydrothermal treatment of TiN/Si substrate at 80C for 5 minutes or at 60C for 2 hours, and the particles started to films at 80C for more then 2 hours. However, such the cubic BaTiO3 particles could be observed on TiN/Si substrate at 80C for only 1 minute by using the galvanic couple technique and continuous dense films at was formed 80C for 1 hour. Therefore, the growth rate of BaTiO3 on TiN/Si substrate by the galvanic couple technique is faster than that by the low temperature hydrothermal technique. The thickness difference of the BaTiO3 films between two methods was approximately 20-26 %. Furthermore, the growth rate BaTiO3 over layer on TiN/Si substrates is also faster and than that on Ti/Si substrate using the galvanic couple technique.
Moreover, above mentioned techniques for preparing BaTiO3 could avoid the contamination of BaCO3, which is often reported in literatures in synthesizing BaTiO3. This could make mass production feasible in the future.
URI: http://hdl.handle.net/11455/9623
Appears in Collections:材料科學與工程學系

Show full item record
 
TAIR Related Article

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.