Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/9649
標題: TiSi2 相的形成及其應力變化
Evolution of Stresses During Formation of TiSi2
作者: 陳明義
Chen, Ming-Yih
關鍵字: TiSi2;矽化物;titanium silicide;curvature;stress;C49;C54;曲率;應力
出版社: 材料工程學研究所
摘要: 
TiSi2有兩種不同的相,一種是在低溫時即可由鈦和矽反應形成的介
穩定(metastable)相--C49相;另一種則是要在較高的溫度下由C49相經由
相變化而生成的C54相,這是一種穩定(stable)相。由於C49相及C54相的
熱膨脹係數和矽基材的熱膨脹係數不同,因此在C49相及C54相反應生成時
,薄膜與基材間會有應力作用,因此會使得試片產生彎曲(bending)的現
像,而使用雷射量測系統在試片退火的同時(in situ)量測試片的曲率,
便能知道試片在退時,因為相變化或其它因素,造成試片所受到的應力改
變的情形。另外,配合X光繞射分析,將試片曲率變化的情形和相變化的
情形相結合後,便可利用試片在曲率上的變化,推測 試片內相反應的情
況。 本實驗
中,試片退火初期,薄膜中的鈦會發生晶粒成長的現像,因而使得試片曲
率大幅上升;之後,鈦和矽會反應生成TiSi2-C49相,也使得試片曲率小
幅上升;最後C49相生生相變化形成C54相,此時的試片曲率有輕微的上升
,但是不明顯。
There are two different phases of TiSi2. One is a metastable
C49 phase which could be formed from titanium and silicon
reaction at low temperature. The other is a stable C54 phase
which was formed from phase transformation of C49 phase at high
temperature. Because the thermal expansion coefficients and the
atomic density of C49 phase and C54 phase are different from
those of the substrate silicon, there would be stresses exerted
between film and substrate when C49 phase and C54 phase are
formed. The induced stress could make samplesbend. If using an
in situ laser measurement system to measure the curvature
ofsamples during annealing, the stress exerted on the samples
due to film changecould be quantitatively determined. By
combining Rutherford backscattering spectrometry, X-ray
diffraction and curvature measurement, we qualitatively
identify the relation between the stress change and phase
evolution of Ti and Si systems.
In this work, we can classify the curvature change of the
samples into foustages. In the first stage, we observed the
curvature of samples increased rapidly which was associated
to the grain growth and titanium film relaxation.In the second
stage, we observed the curvature of samples increased slowly
during the C49 phase formation. In the third stage, we observed
the curvature of samples furth increased during the C54 phase
formation. In the fourth stagewhich significant amount of oxygen
was detected in the film, the rapid decreasing in the
sample curvature was observed.
URI: http://hdl.handle.net/11455/9649
Appears in Collections:材料科學與工程學系

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