Please use this identifier to cite or link to this item:
標題: TiSi2 相的形成及其應力變化
Evolution of Stresses During Formation of TiSi2
作者: 陳明義
Chen, Ming-Yih
關鍵字: TiSi2;矽化物;titanium silicide;curvature;stress;C49;C54;曲率;應力
出版社: 材料工程學研究所
像,而使用雷射量測系統在試片退火的同時(in situ)量測試片的曲率,
情形相結合後,便可利用試片在曲率上的變化,推測 試片內相反應的情
況。 本實驗
There are two different phases of TiSi2. One is a metastable
C49 phase which could be formed from titanium and silicon
reaction at low temperature. The other is a stable C54 phase
which was formed from phase transformation of C49 phase at high
temperature. Because the thermal expansion coefficients and the
atomic density of C49 phase and C54 phase are different from
those of the substrate silicon, there would be stresses exerted
between film and substrate when C49 phase and C54 phase are
formed. The induced stress could make samplesbend. If using an
in situ laser measurement system to measure the curvature
ofsamples during annealing, the stress exerted on the samples
due to film changecould be quantitatively determined. By
combining Rutherford backscattering spectrometry, X-ray
diffraction and curvature measurement, we qualitatively
identify the relation between the stress change and phase
evolution of Ti and Si systems.
In this work, we can classify the curvature change of the
samples into foustages. In the first stage, we observed the
curvature of samples increased rapidly which was associated
to the grain growth and titanium film relaxation.In the second
stage, we observed the curvature of samples increased slowly
during the C49 phase formation. In the third stage, we observed
the curvature of samples furth increased during the C54 phase
formation. In the fourth stagewhich significant amount of oxygen
was detected in the film, the rapid decreasing in the
sample curvature was observed.
Appears in Collections:材料科學與工程學系

Show full item record

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.