Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/96506
標題: Sn-Sb-S半導體作為光敏化劑製作量子點敏化太陽能電池
Sn-Sb-S liquid-junction semiconductor-sensitized solar cells
作者: 辛哈利
Harrys Samosir
關鍵字: 液態敏化太陽能電池;Sn-Sb-S量子點;liquid junction sensitized solar cells;Sn-Sb-S semiconductor quantum dots (QDs)
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摘要: 
Sn-Sb-S 液態敏化太陽能電池藉由SILAR法合成Sn-Sb-S量子點經由本實驗進行探討。最佳樣品條件為: SnS 8 cycles / SbS 6 cycles 並在氮氣下進行325 ℃ ,12 分鐘的退火流程,並且以多碘(I-/I3-)當作電解液,白金(Pt)當作對電極。
由XRD分析及TEM分析證明Sn-Sb-S確實生長在孔隙型(mp)-TiO2中,其顆粒大小約為 23 nm 。並經由UV-VIS 光譜儀分析,附加一層ZnSe passivation在最佳樣品條件下製作的成品,其能隙為 1.38 eV而其吸收範圍為300 – 850 nm。
在表現最佳的ZnSe passivation layer電池中,在一個太陽光源強度下所得到的轉換效率為 2.58 %,其短路電流 Jsc 為 14.04 mA/cm2,開路電壓 Voc為 0.46 V,FF (Fill factor)為39.91 % 。
當光源強度降低至0.05個太陽光時,所得到的轉換效率為4.89 %,短路電流為 1.36 mA/cm2 (歸一化後為27.2 mA/cm2)。
最後經由EQE量測得到,在波長為500 nm時轉換效率可達72%。

Tin antimony sulfide as a sensitizer for liquid junction sensitized solar cells has been investigated. Sn-Sb-S semiconductor quantum dots (QDs) were grown by using the successive ionic layer adsorption and reaction (SILAR) method. The best condition for the growth process is 8 cycles for Sn-S and 6 cycles for Sb-S annealing at 325 ℃ for 12 min in N2, using polyiodide (I-/I3-) as the electrolyte, and platinum (Pt) the as counter electrode. The X-Ray diffaction (XRD) patterns and transmission electron microscope (TEM) images confirmed that Sn-Sb-S was successfully grown into mesoporous (mp)-TiO2 with a particle size of ~23 nm. UV-Visible measurements showed that Sn-Sb-S grown using the best condition with ZnSe passivation layer has an energy gap of 1.38 eV which covers 300-850 nm of the optical wavelength.
The best cell with a ZnSe passivation layer yielded a short-circuit current density Jsc of 14.04 mA/cm2, an open-circuit voltage Voc of 0.46 V, a fill factor FF of 39.91%, and a power conversion efficiency η of 2.58% under 1 sun. At the reduced light intensity of 0.05 sun, the η increased 4.89% with Jsc = 1.36 mA/cm2 (which could be normalized to 27.2 mA/cm2 ). The external quantum efficiency (EQE) spectrum covered the spectral range of 300–850 nm with a maximal EQE = 72% at λ = 500 nm.
URI: http://hdl.handle.net/11455/96506
Rights: 同意授權瀏覽/列印電子全文服務,2020-08-01起公開。
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