Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/9667
標題: 450℃熱處理對Cz矽晶片內氧凝聚造成的影響
The influence of 450℃ heat-treatment on the oxygen precipitation in Czochralski silicon wafer.
作者: 徐瑋
Hsu, Wei
關鍵字: precipitation;凝聚物;retardation;intrinsic gettering;遲滯;內稟去疵
出版社: 材料工程學研究所
摘要: 
本實驗主要是研究Cz晶片內氧凝聚的現象.實驗中,我們採用450℃ -
1000℃二階段與1200℃ - 450℃- 1000℃三階段式熱處理,研究晶片經過
不同熱處理後,氧凝聚的情形.氧凝聚的速率由FTIR量測間隙氧含量決定.
本研究發現,450℃ - 1000℃二階段熱處理的晶片,在450℃熱處理16 -
64小時出現氧凝聚遲滯現象,第二時段的遲滯現象出現在450℃熱處理512
小時以上的晶片裡.經過前置高溫熱處理的晶片也有類似的遲滯現象出現.
同時,我們也發現前置熱處理會加速其後較低溫熱處理時的氧凝聚速率.本
研究裡,我們報告晶片裡的氧凝聚物與微觀結構的觀察,同時也展示FTIR的
吸收光譜圖.

In this study, we report a new set of experimentalresults on
oxygen precipitation carried out usingCzochralski silicon wafers
: a low-high two stepheat-treatment in N2 ambient was employed :
thefirst step heat-treatment low temperature ( at 450℃ for 0 -
1024 hours ) is for SiO2 precipitatenucleation and the high
temperature step ( at 1000℃ for 0 - 40 hours ) is for
precipitate growth. Theoxygen precipitation rate is monitored by
measuring the interstitial oxygen concentration in the
siliconwafer. Two precipitation retardation phenomena
wereobserved on wafers that received prolonged nucleationheart-
treatment. First retardation peak whick is morepronounced
occurred on the wafers which received l6h - 64 h at 450 ℃ with
the microdefect features observed in this study , we believed
that thisretardation phenomenon reported by Tan and Kung on 750
℃ - 1050 ℃ two-step heat-treatment testSecond retardation peak
occurred on the wafersheat-treated at 450 ℃for 512 h or longer.
Thisretardation peak is relatively weak. And we still notquiet
understand the mechanism of this retardationphenomenon. A set
of idential wafers were preheated at 1200 ℃ / 1 h in dry N2,
prior to the two-step heat-treatment described above. The short
hightemperature pre-heat-treated wafers enhanced theoxygen
precipitation rate and also revealed thesimiliar retardation
phenomena described above, wereport the microdefect features and
FT/IR spectra onthe final stage of two-step heat-treatments.
Aprofound model is still needed to cover all thephenomena
observed.
URI: http://hdl.handle.net/11455/9667
Appears in Collections:材料科學與工程學系

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