Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/97122
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dc.contributor貢中元zh_TW
dc.contributorChung-Yuan Kungen_US
dc.contributor.author方祥安zh_TW
dc.contributor.authorHsiang-An Fangen_US
dc.contributor.other電機工程學系所zh_TW
dc.date2018zh_TW
dc.date.accessioned2019-02-01T05:23:05Z-
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dc.identifier.urihttp://hdl.handle.net/11455/97122-
dc.description.abstract本論文以水熱法製成一維摻鎂氧化鋅奈米柱陣列(Zn1-xMgxO),並且分為兩個部份進行探討: 第一個部份是分析水熱法製備奈米柱之成長過程。我們在室溫下置入樣品後再將溶液的溫度升至90℃,並且確認奈米柱的孕核及成長大約要在溫度70~80℃以上時才會發生,當達到穩定的溫度後軸向及徑向的生長速度將近似於線性關係,溶液的升溫則會增加奈米柱的成長速度,尤其對徑向成長的助益較大。另外我們也觀測到晶種層有部份厚度可能會參與到奈米柱成長並在最終轉變成為奈米柱的一部份。 第二個部份則是分析氧化鋅奈米柱陣列在不同溶液濃度、鎂摻雜條件下的微結構、光學及電性特性差異,並製成紫外光感測器分析奈米柱電性。為了使照光效率提高,我們特地使用透明ITO作為基板並從透明側照光避免光線被金屬電極遮住。為了使介面形成歐姆接觸,本研究在奈米柱陣列與銦金屬電極的界面之間增加了氧化鋅鋁(AZO)薄膜作為n+半導體。在實驗中我們發現到鎂摻雜會影響奈米柱的粗細,鎂摻雜濃度提高也會使亮、暗電流有下降的趨勢,而光感測器的靈敏度也會增加。最後,希望本論文的研究經驗可作為未來製作氧化鋅奈米柱陣列相關研究的參考依據。zh_TW
dc.description.abstractIn this thesis, one-dimensional Mg-doped ZnO nanorod arrays was made through hydrothermal method, and to be discussed by two sections: The First section, I will analyze the growth of nanorods which made are through hydrothermal method. We put the sample into room-temperature solution and then heat the solution to 90°C, and we understand that nucleation of ZnO nanorods and its growth must be above specified temperature 70~80℃. When temperature is achieved and stable, growth rate of axial and radial is close to linear relation. Also, The heating process of liquid will increase nanorods growth rate, especially for radial direction. We also observe that thickness of seed layer may participate in growth of nanorods and become part of nanorods at the end. In the second section, I will analyze the difference of microstructures、optical and electrical performance of ZnO nanorod arrays between different liquid densities, and condition of Mg doping. In order to analyze above characteristic, we also make UV sensor. In order to increase the efficiency of light, and to prevent light being covered by metal electrode, we select ITO as base material and make light through transparent side. In order to form ohmic contact on the interface, we add Al doped ZnO (AZO) films as n+ semiconductors between ZnO nanorod arrays and metal electrode. During experiment, we found Mg doping will affect the thickness of nanorods. Also increase density of Mg doping will decrease bright/dark current while sensitivity of light sensor will also increased. In the end, we wish this research experience will be an important reference for ZnO nanorod arrays production in the future.en_US
dc.description.tableofcontents論文口試審核頁 i 中興大學博碩士論文授權書 ii 誌謝 iii 摘要 iv Abstract v 目錄 vi 圖 目 錄 viii 表 目 錄 xii 第一章 簡介 1 1.1 前言 1 1.2 研究背景與動機 2 第二章 文獻回顧 4 2.1 氧化鋅的特性簡介 4 2.1.1 氧化鋅的缺陷 6 2.1.2 氧化鋅的紫外光與綠光放射 7 2.1.3 氧化鋅的導電特性 9 2.2 溶膠-凝膠法 11 2.3 水熱法 12 2.4 奈米柱的接點電阻 13 第三章 實驗步驟與研究方法 16 3.1 實驗流程 16 3.1.1 材料準備 16 3.1.2 溶膠-凝膠法溶液調製 18 3.1.3 基板清潔 19 3.1.4 晶種層製備 20 3.1.5 成長奈米柱 21 3.1.6 電極製作 22 3.2 實驗量測方法與設備儀器 24 3.2.1 FE-SEM場發射掃描式電子顯微鏡 24 3.2.2 X光繞射分析儀 26 3.2.3 PL光激發螢光光譜儀 27 3.2.4 I-V Curve電性量測系統 28 第四章 實驗結果與討論 30 4.1 以水熱法製備奈米柱之成長過程分析 30 4.2 Zn1-xMgxO奈米柱陣列特性 37 4.2.1 SEM微結構分析 37 4.2.2 X繞射分析(XRD) 42 4.2.3 光激發螢光光譜分析(PL) 49 4.2.4 電性分析(I-V) : 53 第五章 結論與建議 66 參考文獻 68zh_TW
dc.language.isozh_TWzh_TW
dc.rights同意授權瀏覽/列印電子全文服務,2021-05-04起公開。zh_TW
dc.subject水熱法zh_TW
dc.subject氧化鋅zh_TW
dc.subject鎂摻雜zh_TW
dc.subject奈米柱zh_TW
dc.subject紫外光感測器zh_TW
dc.subjecthydrothermal methoden_US
dc.subjectZnOen_US
dc.subjectMg-dopeden_US
dc.subjectnanoroden_US
dc.subjectUV sensoren_US
dc.title摻鎂氧化鋅奈米柱陣列之成長與性質研究zh_TW
dc.titleStudy on the growth and properties of Mg-doped ZnO nanorod arraysen_US
dc.typethesis and dissertationen_US
dc.date.paperformatopenaccess2021-05-04zh_TW
dc.date.openaccess2021-05-04-
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item.openairetypethesis and dissertation-
item.cerifentitytypePublications-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
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