Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/97157
標題: 利用CMOS製程製作整合放大電路之光感測器
Photodetector Integrated with Amplifier Circuit Fabricated Using a Standard COMS Process
作者: 單為昕
Wei-Shin Shan
關鍵字: CMOS;場效電晶體;光偵測器;微機電系統;Photodetector;MOSFET;CMOS;MEMS
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摘要: 
本研究使用0.18 μm的標準矽製程製作光學感測器,所製作的光感測器為場效光電晶體,具有環形的幾何結構可以增加吸光校果,設計出的雙源極的結構擁有兩邊對稱的表面反轉層,目的是為了可以吸收更多的光子,以上皆為幾何結構上的設計,為了讓光感測器能有進一步的效能提升,運用到垂直的雙極性接面電晶體,當雙極性接面電晶體開始運作時,基極和集極間的空乏層為因為反向偏壓層加寬,使電子不易跑到P型基板中,眾多的電子會被累積在N-well中,使電晶體反轉的效果加劇,並增加響應度,此種設計可以讓電晶體能以較小的面積,達到較高的輸出電流。透過後製程蝕刻掉上層的二氧化矽層增加透光率,並使用SEM和白光頻譜分析儀得出最佳蝕刻深度為8 μm,量測感測器的性能在近紅外光譜有最佳響應,在800 nm響應度可達 213 A/W,輸出的電流可達mA的等級,並透過電阻轉換成電壓輸出到電路中,設計的電路為兩極放大器,可將電壓抬升到1 V以上的大小,其變化量可由簡單的儀器或是微控制器所讀取,讓使用者能以成本較低的成本和簡單的量測設備知曉光線的變化量。

This work uses a standard 0.18 μm complementary metal oxide semiconductor (CMOS) process to fabricate a photodetector, which is metal-oxide-semiconductor field-effect transistor (MOSFET). The detector can absorb more photons because of the design of ring shape and double source. This readout circuit is used to enlarge the output current of the photodetector. And this work improves the photodetector’s performance by the bipolar junction transistor (BJT) which locates inside the vertical structure of the photodetector. When the BJT starts operation, both n-well and p-substrate are in the reverse filed. It reduces the threshold voltage, widens the carrier channel and enhances the response. According to the above design rules, the photodetector has small area and reaches high output voltage. We also use wet etching to remove the oxide layer that protects the metal layers, reduces the light transmittance and enhances the transmittance. The maximum depth measured using scanning electron microscope (SEM) and white-light interferometer is 8 μm. The maximum responsivity of the photodetector is 213 A/W under irradiating 800 nm. The output current is changed into output voltage using the resistance circuit. The output voltage is over 1 V through the two-stage amplifier.
URI: http://hdl.handle.net/11455/97157
Rights: 不同意授權瀏覽/列印電子全文服務
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