Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/97833
標題: 以熱蒸鍍製備SnSe薄膜之熱電性質
Thermoelectric Properties of SnSe Thin Film Prepared by Thermal Evaporation
作者: 張玉欣
Yu-Hsin Chang
關鍵字: SnSe;薄膜;熱蒸鍍;熱電性質;SnSe;thin film;thermal evaporation;thermoelectric properties
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摘要: 
本研究利用熱蒸鍍在玻璃基板上蒸鍍出SnSe薄膜,以不同退火溫度對SnSe薄膜進行熱處理2小時。利用X光繞射儀(XRD)、掃描式電子顯微鏡(SEM)、能量散射光譜儀(EDX)、X光光電子能譜儀(XPS)、紫外/可見光光譜儀(UV/Vis)、Hall效應分析儀(HEA)和熱電量測設備,分析SnSe薄膜的結晶結構、表面形貌、薄膜成分分析、表面成分分析、能隙、載子性質和熱電性質(含電導率與Seebeck係數)。從XRD鑑定蒸鍍出的薄膜為SnSe。隨著退火溫度增加,平均板厚也增加。SEM圖觀察到表面形貌為層狀結構。EDX分析SnSe成分莫耳比例接近1比1。XPS分析得知SnSe薄膜中有氧化物的產生影響其能隙及熱電性質。當退火溫度為450 ℃時能隙為1.86 eV,Hall量測得知其載子濃度與遷移率,經過退火後增加至3.45×1020 cm-3及4.85×10-1 cm2/Vs。當退火溫度為450 ℃,量測溫度為50 ℃時,電導率為39.21 S/cm,Seebeck係數為2.12 mV/K,計算出的功率因子為17.54 mW/(mK2)。

In this Study, the SnSe thin film deposited on glass substrate by thermal evaporation, and heat treated at different annealing temperatures for 2 hour. Analysis the crystal structure, surface morphology and compositional analysis of thin film , surface composition analysis, band gap, carrier properties and thermoelectric properties (including conductivity and Seebeck coefficient) of SnSe thin film using X-ray diffractometer (XRD), scanning electron microscope (SEM), energy dispersive X-ray analysis (EDX), X-ray photoelectron spectroscopy (XPS), UV/Vis spectrometer (UV/Vis), Hall effect analysis (HEA) and thermoelectric measuring equipment, respectively. The XRD confirmed the thin film by thermal evaporation was SeSe, and as the annealing temperature increases, the average plate thickness also increased. The surface morphology was observed as a layered structure by SEM. The ratio of SnSe composition in EDX analysis was close to 1:1. XPS analyses shows that the presence of oxides in the SnSe thin film affects the band gap and thermoelectric properties. The band gap is increased to 1.86 eV. When the annealing temperature is 450 °C. The carrier concentration and mobility are measured by Hall measurement. After heat treatment, it is increased to 3.45×1020 cm-3. And 4.85×10-1 cm2/Vs. when the annealing temperature is 450 °C and the measurement temperature is 50 °C, the conductivity is 39.21 S/cm, the Seebeck coefficient is 2.12 mV/K, and the calculated power factor is 17.54 mW. /(mK2).
URI: http://hdl.handle.net/11455/97833
Rights: 同意授權瀏覽/列印電子全文服務,2022-01-22起公開。
Appears in Collections:材料科學與工程學系

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