Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/97850
標題: 成長鐵矽化物/矽異質結構奈米線及其光感測性質之研究
Fabrication of Fe-Silicide/Si Heterstructure Nanowires and their Photosening Properties
作者: 林俊龍
Jyun-Long Lin
關鍵字: 矽奈米線;鐵矽化物/矽異質結構奈米線;光感測器;Silicon nanowiresIron-silicide/silicon heterstructure;photosening
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摘要: 
矽奈米線陣列已經被證實為可靠且優異的光感測元件架構,與光催化反應之催化劑,尤其可以提供相較於薄膜感測器更大的反應面積,與更優秀的抗反射與光學吸收能力但其具有較大的能隙且矽為間接能隙對因此於近紅外光效果較差。
  鐵矽化合物其中的β-FeSi2具有低能隙(0.8~0.95eV),β-FeSi2會與矽形成p-n接面,因此目前普遍被應用於近紅外光偵測器、LED(light-emittting diode)、太陽能電池應用上被廣泛研究。
本實驗利用奈米球微影術與金屬輔助化學蝕刻法製備出奈米線陣列後,於500°C蒸鍍鐵矽化物並升溫至700°C進行後續熱處理,利用80°斜角入射角進行蒸鍍,成長鐵矽化物/矽異質結構奈米線,進行後續元件製作並探討其電傳導特性與光感測特性與光催化降解亞甲基藍。
實驗結果顯示,鐵矽化物的結構會隨著鐵蒸鍍量與持溫時間改變,鐵蒸鍍量1 5 nm持溫2小時下可以得到完整的β-FeSi2相,蒸鍍量 15 nm矽化物/矽異質結構奈米線陣列元件相較於純矽奈米線陣列其具有一高電流與高電流變化的特性。於光催化降解亞甲基藍染料中發現蒸鍍量5 nm形成分布均勻且細小的鐵矽化物奈米顆粒有增強光降解效率的作用。

Silicon nanowire arrays has proven to be a reliable and excellent phtoto sensing device and a catalyst for photocatalytic reaction.In particular, silicon nanowire array sensor can provide a larger reaction area better anti-reflection and hegher optical absorption capacity than thin film sensor.However, it has a week photosensing properties in near-infrared region because of its indirect bandgap and energy of 1.1eV.
Because of its low energy bandgap of (0.8~0.95eV), and forming a p-n junction. β-FeSi2 is widely used in near-infrared light detectors, LEDs (light-emittting diodes), Solar cells.
In this study,silicon nanowire arrays were prepared by nanosphere lithography and metal-assisted chemical etching. β-FeSi2/Si heterstructure nanowire arrays were fabricated by 80° glancing angle Fe deposition and reactive deposition epitaxy (RDE). The electrical,photosensing and photocatalytical β-FeSi2 /Si heterostructured nanowire array devices. the electrical were investigated.
The results show that the phase of iron silicide depend on amount of iron ,deposition temperature and annealing time. When 15 nm iron deposited on silicon nanowire array at 500 °C and subsequently annealed at 700 °C for 2 hours the β-FeSi2 phase can be obtained. The β-FeSi2 /Si heterostructured nanowire arraydevice has a higher photocurrent than silicon nanowire array device. 5 nm iron deposited sample exhibited the highest decomposition rate of methylene blue dye under visible light irradiation because its rion silicide crystals had small size and separated from each other.
URI: http://hdl.handle.net/11455/97850
Rights: 同意授權瀏覽/列印電子全文服務,2019-08-31起公開。
Appears in Collections:材料科學與工程學系

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