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Explore Carrier Transport in Layered SnS2 Transistors
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在直流量測中，二硫化錫在六方氮化硼襯底(SnS2/h-BN)電性量測結果相較於二氧化矽為襯底(SnS2/SiO2)的臨界電壓由平均值－23.71 V提升到0.29 V、載子遷移率由平均值由0.98 cm2/Vs上升到6.89 cm2/Vs，次臨界擺伏平均平均值5.83 V/dec 下降至 2.76 V/dec，實驗結果以六方氮化硼做為一個電晶體襯底明顯提升了二硫化錫的電性。在變溫量測中，分析二硫化錫載子遷移率隨溫度變化趨勢，發現SnS2/SiO2系統在載子遷移率對溫度變化趨勢符合的晶格散射主導傳輸機制，而SnS2/h-BN系統則以雜質散射。
低頻雜訊量測結果，發現SnS2/SiO2系統量測擬合結果與載子遷移率變異模型相符，SnS2/h-BN系統量測擬合結果與載子數目變異模型相符，結果與直流量測結果一致。低溫的低頻雜訊量測中，SnS2/h-BN系統量測結果出現g-r雜訊，其捕捉釋放時間與室溫SnS2/SiO2系統不同，分析其缺陷能量為18 meV相較於其他文獻中同樣有硫缺陷的二硫化鉬缺陷能量為23 meV。因此六方氮化硼可以提升二硫化錫電晶體特性，並且屏蔽了來自二氧化矽基板的雜質散射與缺陷補捉對載子傳輸的影響。
In this paper, the mechanism of carrier transport of tin disulfide films under different substrates was investigated. The thickness of the nanoscale device is about 5 layers which were separated by mechanical exfoliation method. The DC measurements dependence of temperature and measurements of low-frequency noise had been carried out to demonstrate the scattering effect and the influence for carrier in silicon dioxide and hexagonal boron nitride used as device substrates.
In DC measurements, the threshold voltage of tin disulfide on hexagonal boron nitride (SnS2/h-BN system) and silicon dioxide (SnS2/SiO2 system) increased from 23.71 V to 0.29 V, the mobility of the carrier increased from 0.98 cm2/V·s to 6.89 cm2/V·s, and the subthreshold swing decreased from 5.83 V/dec to 2.76 V/dec. The experimental results showed that hexagonal boron nitride was used as a substrate to improve the electrical properties of tin disulfide. In the dc measurements in different temperature, the trend of carrier mobility versus temperature in tin disulfide system is analyzed. It is found that the lattice scattering mechanism in SnS2/SiO2 system is consistent with the temperature change trend in carrier mobility, while the impurity scattering mechanism is used in SnS2/h-BN system. The results of low-frequency noise measurement show that the fitting results of the SnS2/SiO2 system are in agreement with the carrier mobility fluctuation model. The fitting results of the SnS2/ h-BN system are in agreement with the carrier number fluctuation model consistent with the DC measurements. The low-frequency noise measurement in low temperature, g-r noise appears in SnS2 / h-BN system, and the time of carrier capture and release time is different from that in room temperature SnS2/SiO2 system. Its defect energy of 18 meV is compared with that of MoS2 which also has the sulfur defect energy of 23 meV in other literature. Therefore, hexagonal boron nitride can improve the properties of tin disulfide transistors and shield the influence of impurity scattering and defect compensation from SiO2 substrate on carrier transport.
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