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dc.contributorJun- Yen Uanen_US
dc.contributor.authorKang- Nian Pengen_US
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dc.description.abstract鎂錫矽熱電材料Mg2(Si, Sn)材料為一具有發展潛力的中溫型熱電材料。由於鎂金屬具有高活性,易在高溫環境產生氧化行為,造成Mg2(Si, Sn)熱電合金會因氧化造成結構變化,進而影響熱電性能。鎂錫矽熱電材料最佳應用溫度約在400oC左右,文獻提鎂錫矽熱電材料會在430oC~500oC因為鎂元素氧化消耗,造成相分離,產生純錫球,且伴隨著大量氧化物的產生,持續性的裂紋擴展,破壞了試片原有結構。本研究首次發現在400oC加熱20hr後,發現了純錫球的產生,且鎂錫矽熱電材料在以空冷的方式冷卻,發現表面有較多團簇的氧化鎂,且有錫鬚晶產生。根據文獻,錫鬚晶生長點易始於基材與氧化物或是缺陷之界面處;在較多團簇的氧化鎂之鎂錫矽熱電合金試片表面,因提供較多的「界面」使錫鬚晶生長。此現象同時也代表成分配比的流失,故本研究將探討鎂錫矽熱電材料之氧化行為以及其防護措施。本實驗利用噴塗氮化硼(Boron Nitride)之方式,能防止鎂錫矽熱電材料結構崩解。以TEM解析,發現在氮化硼膜中,片狀氮化硼層間有網狀分布的黏結劑相互堆疊,使氮化硼膜更為緻密,防止氧氣持續進入熱電材料內部,且在介面形成一層約200nm之氧化鎂層,此兩種效果隔絕氧大量進入試片,防止鎂錫矽熱電材料形成更嚴重的氧化反應使材料產生崩解。zh_TW
dc.description.abstractMg2(Si, Sn) thermoelectric material is a medium-temperature thermoelectric material with development potential. Mg has high activity; it is easy to generate oxidation behavior in high temperature, which causes the structure change of Mg2(Si, Sn) thermoelectric alloy and affecting the thermoelectric performance. The optimum application temperature of Mg2(Si, Sn) thermoelectric materials is about 400oC. The literature mentions that Mg2(Si, Sn) thermoelectric materials will have an oxidation reaction in 430oC~500oC, causing phase separation, producing pure tin balls, a large number of oxides. The continuous crack propagation destroys the original structure. In this study, we found for the first time that after the heating at 400oC for 20hr, the production of pure tin balls was found, and the Mg2(Si, Sn) thermoelectric materials were cooled in an air-cooled manner, and it was found that there were many clusters of MgO on the surface, and tin whiskers were produced. According to the literature, the tin whisker growth point tends to start at the interface between the substrate and the oxide or defect; with more clusters, MgO on the surface and we can find the tin whisker on the surface. Clusters MgO provides more 'interface' for Sn whisker growth. This phenomenon also represents the loss of the distribution ratio, so this study will explore the oxidation behavior of Mg2(Si, Sn) thermoelectric materials and their protective measures. In this experiment, the method of spraying boron nitride (Boron Nitride) can prevent the disintegration of the structure of the Mg2(Si, Sn) thermoelectric material. By TEM analysis, it was found that in the boron nitride film, the network-formed binders between the lamellar boron nitride layers were stacked on each other to make the boron nitride film denser, preventing oxygen from continuously entering the inside of the thermoelectric material, and forming a layer on the interface. MgO layer is about 200 nm, which insulates a large amount of oxygen into the test piece, prevents the Mg2(Si, Sn) thermoelectric material from forming a more severe oxidation reaction to cause the material to disintegrate.en_US
dc.description.tableofcontents摘要 i ABSTRACT ii 目錄 iv 表目錄 v 圖目錄 vi 第一章 前言 1 第二章 實驗步驟與方法 12 2.1 實驗原料準備 12 2.2 熔煉鑄造製程與球磨與燒結製程 12 2.3 熱歷程處理及氮化硼噴塗防護方法 12 2.4 結晶結構與顯微組織分析儀器 13 第三章 結果與討論 17 3.1 鎂錫矽熱電合金鑄態與燒結後結晶結構金相顯微組織分析 17 3.2 無噴塗氮化硼之Mg2(Si, Sn)熱電塊材 17 3.2.1無噴塗氮化硼之Mg2(Si, Sn)熱電塊材300oC熱歷程測試與分析 18 3.2.2無噴塗氮化硼之Mg2(Si, Sn)熱電塊材400oC熱歷程測試與分析 18 3.2.3無噴塗氮化硼之Mg2(Si, Sn)熱電塊材400oC加熱後產生錫球 19 3.2.4無噴塗氮化硼之Mg2(Si, Sn)熱電塊材400oC加熱20hr後產生錫鬚 19 3.2.5無噴塗氮化硼之Mg2(Si, Sn)熱電材料400oC加熱20hr後快速冷卻產生錫鬚機制 21 3.3噴塗氮化硼於Mg2(Si, Sn)熱電塊材 21 3.3.1 氮化硼噴劑之XRD分析與SEM觀察 21 3.3.2 TEM分析Mg2Sn0.6Si0.4熱電材料氮化硼防護成因 23 3.3.3 氮化硼均勻噴塗後陰乾之TEM橫截面影像分析 24 3.3.4 烘烤後以400oC加熱第2天後之TEM橫截面影像分析 24 3.3.5 烘烤後以400oC加熱第7天之TEM橫截面影像分析 25 3.3.6 氮化硼防護層對Mg2(Si, Sn)熱電材料氧化防護機制 26 第四章 結論 61 參考文獻 62zh_TW
dc.subjectMg2(Si, Sn)熱電材料zh_TW
dc.subjectMg2(Si, Sn) thermoelectric materialen_US
dc.subjectOxidation propertyen_US
dc.subjectTin whiskersen_US
dc.subjectBoron Nitrideen_US
dc.titleMg2(Si, Sn)熱電合金氧化性質及氮化硼噴塗層對其氧化防護之研究zh_TW
dc.titleOxidation Properties of Mg2(Si, Sn) Thermoelectric Alloy and its Oxidation Protection by Boron Nitride Spray Coatingen_US
dc.typethesis and dissertationen_US
item.openairetypethesis and dissertation-
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