Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/97946
標題: 探討添加Re, Ru元素與NixPd100-x中間層對CoCrPt磁性及微結構的影響
Magnetic properties and microstructure of CoCrPtX (X=Re, Ru) and CoCrPt-oxide/Ru/NixPd100-x films
作者: 畢成
Chen Pi
關鍵字: 鎳鈀;錸;鈷鉻鉑;NiPd;Re;CoCrPt
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摘要: 
本實驗使用直流磁控濺鍍系統,分成兩大部分:第一部份在室溫下鍍著NixPd100-x在Ni62.5Ta37.5合金薄膜上,並依序鍍上Ru及CoCrPt-oxide,目的增強Ru的織構進而使CoCrPt的織構變強,比較NixPd100-x對Ru及CoCrPt的影響。第二部分在CoCrPt中添加8 at% Re, Ru元素及3 at% Re元素,目的是為了藉由添加元素改善記錄層的磁性以及微結構,並提升Hc、Hn、Ku等磁性值。
第一部分在玻璃基板上鍍著膜層結構為CoCrPt(18 nm)/Ru(20 nm)/NiTa(10 nm)之薄膜以及CoCrPt(18 nm)/Ru(20 nm)/NixPd100-x(t nm)/ NiTa(10 nm)之薄膜,NiPd的成分分別為Ni20Pd80、Ni50Pd50、Ni80Pd20,選用與Ru晶格常數相互匹配的中間層材料NixPd100-x鍍著在NiTa合金薄膜上,再改變兩者之厚度(0、5、10和15 nm ),固定CoCrPt、中間層Ru的膜層厚度。從磁滯曲線圖顯示加入Ni20Pd80中間層,垂直繳頑磁力及磁晶異向能,分別為5.4 kOe及3.7*106 erg/cm3;加入Ni50Pd50中間層,垂直繳頑磁力及磁晶異向能,分別為5.7 kOe及4.1*106 erg/cm3;加入Ni80Pd20中間層,垂直繳頑磁力及磁晶異向能,分別為5.7 kOe及4.1*106 erg/cm3,比較NixPd100-x中間層,Ni20Pd80中間層更有效的增強了Ru(0002)織構強度進而增強了CoCrPt(0002)織構強度改善了其磁性◦
第二部分在玻璃基板上製備膜層結構為CoCrPtX(t nm)(X=8 at%Re, Ru)/Ru(20 m)/NiTa(10 nm)以及Co(CrX)Pt(t nm)(X=3 at%Re)/Ru(20 m)/NiW(10 nm)/NiTa(10 nm),改變CoCrPt之膜層厚度(12、15、18和21 nm)。從磁滯曲線圖結果發現在CoCrPt中添加8 at% Re時,垂直矯頑力為5.4 kOe、成核場為2043 Oe、磁晶異向能為3.9*106 erg/cm3;在CoCrPt中添加8 at% Ru時,垂直矯頑力為4.2 kOe、成核場為1255 Oe、磁晶異向能為3.3*106 erg/cm3。相較於添加3 at% Re呈現較高垂直矯頑力為6.1 kOe、磁晶異向能為5.4*106 erg/cm3,從TEM微結構可以看到加入3 at% Re降低了晶粒團簇的現象。

We used a DC magnetron sputtering system in the study. The experiment was divided into two parts. In the first part, we deposited NixPd100-x on Ni62.5Ta37.5 alloy at room temperature, and then sequentially deposited Ru and CoCrPt-oxide. Let the underlying purpose of Ru (0002) peak intensity increased and the texture of CoCrPt becomes stronger and improved vertical anisotropy of magnetic properties, compare the effects of NixPd100-x on Ru and CoCrPt. The second part is to add 8 at% Re, Ru and 3 at% Re elements in CoCrPt. The purpose is to improve the magnetic properties and microstructure of the recording layer by adding elements, and to increase magnetic values such as Hc, Hn, and Ku value.
The first part was CoCrPt(18 nm)/Ru(20 nm)/NiTa(10 nm) of the film and CoCrPt(18 nm)/Ru(20 nm)/NixPd100-x(t nm)/ NiTa(10 nm) of the film. The composition of NiPd is Ni20Pd80, Ni50Pd50, Ni80Pd20 respectively. The lattice constant of NixPd100-x thin film matched with Ru film. And then change the thickness of NixPd100-x (0, 5, 10 and 15 nm), fixed CoCrPt and Ru layer thickness. With Ni20Pd80, illustrates perpendicular magnetic anisotropy with out-of plane coercivity of 5.6 kOe and Ku was 3.9*106 erg/cm3. With Ni50Pd50, illustrates perpendicular magnetic anisotropy with out-of plane coercivity of 3.8 kOe and Ku was 3.2*106 erg/cm3. With Ni80Pd20, illustrates perpendicular magnetic anisotropy with out-of plane coercivity of 3.4 kOe and Ku was 1.8*106 erg/cm3. Comparing NixPd100-x intermediate layer, the Ni20Pd80 intermediate layer enhances the Ru (0002) texture and enhances the CoCrPt (0002) texture to improve its magnetic properties .
The second part was fixed CoCrPtX(t nm)(X=8 at%Re, Ru)/Ru(20 nm)/NiTa(10 nm) of the film and Co(CrX)Pt(t nm)(X=3 at%Re)/Ru(20 nm)/NiW(10 nm)/NiTa(10 nm) of the film, and then change the thickness of CoCrPt (12, 15, 18 and 21 nm). With 8 at% Re in CoCrPt film, the out-of-plane coercivity (Hc) is 5.0 kOe, the nucleation field (Hn) is 2043 Oe and magnetocrystalline anisotropy constant (Ku) is 3.9*106 erg/cm3. With 8 at% Ru in film, the out-of-plane coercivity (Hc) is 4.2 kOe, the nucleation field (Hn) is 1255 Oe and magnetocrystalline anisotropy constant (Ku) is 3.3*106 erg/cm3. As compared to with 3 at% Re in CoCrPt shows higher out-of-plane Hc value of 6.1 kOe and the Ku value of 5.4*106 erg/cm3. From the TEM microstructure could be seen to add the 3 at% Re interface layer, reducing the phenomenon of grain clusters to improve its magnetic properties.
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