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標題: 高功率脈衝磁控濺鍍P型與N型氧化鈦薄膜材料與相關元件特性研究
Characterization and Related Device Performance of p- and n- Type Titanium Oxide Thin Films by High Power Impulse Magnetron Sputtering
作者: 彭武章
Wu-Chang Peng
關鍵字: 一氧化鈦;二氧化鈦;高功率脈衝磁控濺鍍;薄膜電晶體;γ-titanium monoxide (γ-TiO);titanium dioxide (TiO2);high-power impulse magnetron sputtering (HIPIMS);thin film transistor (TFT)
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首先在不同基材偏壓沉積TiOx薄膜,當偏壓為0~ -100 V時,薄膜結構為p 型立方相一氧化鈦(γ-TiO);因鈦離子的轟擊效應,在高基材偏壓-125 V時,薄膜的氧含量也隨之增加,導致晶體結構由γ-TiO轉變為n型金紅石相二氧化鈦(R-TiO2)。在熱處理方面,薄膜的晶粒尺寸會隨熱處理溫度增加而變大,且在溫度為400 oC時,γ-TiO具有最大的晶粒尺寸,此時薄膜的最佳載子遷移率為8.2 cm2/V。當溫度超過400 oC,薄膜則轉變為R-TiO2,而光學性質也隨結構的改變而變化,γ-TiO薄膜具有可調控的能隙(Eg),其範圍在1.9~2.8 eV,且載子濃度介於7.9×1021 ~ 4.6×1023 cm-3。
其次製備p型和n型TiOx薄膜電晶體,在鍍膜過程中,透過改變氧氣流量可製備p型γ-TiO和n型TiO2薄膜作為薄膜電晶體的通道層,其p型γ-TiO和n型TiO2薄膜電晶體的場效遷移率(μFE) 分別為0.2與0.7 cm2/Vs,且它們的電流開/關比(Ion/Ioff)分別為1.7×104與2.5×105 。研究結果證實HIPIMS提供了生長p型和n型金屬氧化物半導體的可能性,並且大幅拓展該技術的實際應用性。

Titanium and its related compound materials have been widely used in the fields of construction, machinery, electronics and optics. These materials are non-toxic, economical and abundant in nature. They have various crystal structures and superior photoelectrochemical properties. Among them, titanium dioxide (TiO2) is highly valuable for various applications consisting of photocatalysts, dye sensitized solar cell, photovoltaic components, and so on. Additionally, titanium monoxide (TiO) has the advantages such as low electrical resistance and high hardness, which can be applied for decorative protective coatings and low power microelectronic circuits. In this study, titanium oxide films were prepared by high-power impulse magnetron sputtering (HIPIMS) for the fabrication of titanium oxide thin film transistors (TFTs).
Firstly, the TiOx films were deposited at various bias voltages applied to the substrate. When the bias voltage ranging from 0 to -100 V was used, the film was analyzed to p-type γ-TiO. However, due to the bombardment effect of titanium ions, the oxygen content of the film was increased at a high bias voltage of -125 V, resulting in the transition of film's crystal structure from γ-TiO to n-type R-TiO2. On the other hand, after performing the annealing treatment, the grain size of the film was increased with increasing the annealing temperature. When the film was annealed at 400 °C, the γ-TiO possessed the largest grain size and the optimum carrier mobility of 8.2 cm2/V. However, as the annealing temperature was higher than 400 °C, the film's structure was changed from γ-TiO to R-TiO2. In addition, the p-type γ-TiO had a large tenability in the energy bandgap ranging from 1.9 to 2.8 eV, and the carrier concentration of 7.9×1021 ~ 4.6×1023 cm-3 can be obtained in these films.
Furthermore, by varying the oxygen flow rate, p-type γ-TiO and n-type TiO2 films were both prepared by HIPIMS. Furthermore, p- and n-type thin film transistors employing γ-TiO and TiO2 as channel layers possessed the field-effect carrier mobilities of 0.2 and 0.7 cm2/Vs, while their on/off current ratios are 1.7×104 and 2.5×105, respectively. Our work also confirms HIPIMS offers the possibility of growing both p- and n-type conductive oxides, significantly expanding the practical usage of this technique.
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