Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/97980
標題: 掃描電容顯微術之調制效率對p-n接面觀察之影響研究
The influence of the modulation efficiency in scanning capacitance microscopy on the observation of p-n junctions
作者: 高宏易
Hung-Yi Kao
關鍵字: 調制效率;p-n接面觀察;掃描電容顯微術;modulation efficiency;the observation of p-n junctions;scanning capacitance microscopy
引用: [1] M. Juhel, F. Laugier, D. Delille, C. Wyon, L. F. T. Kwakman, M. Hopstaken, Appl. Surf. Sci., 252, 7211 (2006). [2] N. Sieber, H. E. Wulf, Appl. Mater. Sci., 126, 213 (1991). [3] N. S. Bennett, N. E. B. Cowern, A. J. Smith, M. Kah, R. M. Gwilliam, B. J. Sealy, T. C. Q. Noakes, P. Bailey, D. Giubertoni, M. Bersani, Mater. Sci. Engl. B, 154, 229 (2008). [4] K. Maknys, O. Douhéret, and S. Anand, Appl. Phys. Lett., 83, 2184 (2003). [5] T. Clarysse, P. Eyben, B. Parmentier, B. V. Daele, A. Satta, W. Vandervorst, R. Lin, D. H. Petersen, and P. F. Nielsen, J. Vac. Sci. Tech. B, 26, 317 (2008). [6] A. A. Khajetoorians, J. Li, C. K. Shih, X. D. Wang, D. G. Gutierrez, M. J. Yacaman, D. Pham, H. Celio, and A. Diebold, J. Appl. Phys., 101, 034505-1 (2007). [7] C. C. Williams, W. P. Hough, and S. A. Rishton, Appl. Phys. Lett., 55, 203 (1989). [8] O. Bierwagen, L. Geelhaar, X. Gay, M. Piešiņš, H. Riechert, B. Jobst, and A. Rucki, Appl. Phys. Lett., 90, 232901-1 (2007). [9] J. Colchero, A. Gil, and A. M. Baro, Phys. Rev. B, 64, 245403-1 (2001). [10] J. Lambert, C. Guthmann, and S. J. Michel, J. Appl. Phys., 93, 5369 (2003). [11] M. Nonnenmacher, M. P. O'Boyle, and H. K. Wickramasinghe, Appl. Phys. Lett., 58, 2921 (1991). [12] P. De Wolf, M. Geva, T. Hantschel, W. Vandervorst, and R. B. Bylsma, Appl. Phys. Lett., 73, 2155 (1998). [13] M. N. Chang, C. Y. Chen, F. M. Pan, J. H. Lai, W. W. Wan, and J. H. Liang, Appl. Phys. Lett., 82, 3955 (2003). [14] M. N. Chang, C. W. Hu, T. H. Chou, and Y. J. Lee, Appl. Phys. Lett., 101, 083503-1 (2012). [15] 陳致仰,"掃描電容顯微術調制效率之研究",國立中興大學奈米科學所碩士學位論文 (2017)。 [16] K. J. Kramer, S. Talwar, I. T. Lewis, J.E. Davison, K. A. Williams, K. A. Benton, and K. H. Weiner, Appl. Phys. Lett., 68, 2320 (1996). [17] T. K. Kwork, P. K. Chu, and C. Chan, Appl. Phys. Lett., 88, 3198 (2000). [18] K. K. Seon, S. Y. Heub, P. K. Tae, K. Hiroyuki, M. Takashi, and H. Kazuhiro, Thin Solid Films, 207 (2000). [19] M. Nakano, H. Kotaki, K. Sugimoto, T. Okumine, F. Yoshioka, S. Kakimoto, K. Ohta, and N. Hashizume, J. Appl. Phys., 39, 2155 (2000). [20] P. A. Stolk, H. J. Gossmann, and D. J. Eaglesham, J. Appl. Phys., 81, 6031 (1997). [21] D. F. Downey, J. W. Chow, E. Ishida, and K. S. Jones, Appl. Phys. Lett., 73, 1263 (1998). [22] Y. Takamura, P. B. Griffin, and J. D. Plummer, J. Appl. Phys., 92, 235 (2002). [23] G. Binnig, H. Rohrer, and A. Chem. Inr. Ed. Engl., 26, 606 (1987). [24] G. Binnig, C. F. Quate, and C. Gerber, Phys. Rev. Lett., 56, 930 (1986). [25] M. L. O'Malley, G. L. Timp, S. V. Moccio, J. P. Garno, and R. N. Kleiman, Appl. Phys. Lett., 74, 272 (1999). [26] D. Goghero, V. Raineri, and F. Giannazzo, Appl. Phys. Lett., 81, 1824 (2002). [27] Y. J. Lee, F. K. Hsueh, S. C. Huang, J. M. Kowalski, J. E. Kowalski, A. T. Y. Cheng, A. Koo, G. L. Luo, and C. Y. Wu, IEEE. Electron. Dev. Lett., 30, 194 (2009). [28] F. Giannazzo, F. Priolo, V. Raineri, and V. Privitera, Appl. Phys. Lett., 76, 2565 (2000). [29] 游明翰,"無電極電鍍奈米銀球探針之研究與應用",國立中興大學奈米科學所碩士學位論文 (2013)。 [30] M. Morita, T. Ohmi, E Hasegawa, M. Kawakami, and M. Ohwada, J. Appl. Phys., 68, 1272 (1990). [31] R. Stephenson, A. Verhulst, P. D. Wolf, M. Caymax, and W. Vandervorst, J. Vac. Sci. Technol. B, 18, 405 (2000).
摘要: 
掃描電容顯微術(scanning capacitance microscopy, SCM)是一項藉由電壓調制技術來量測半導體材料電性的分析方法,對於電容變化的靈敏度極高,可用於電子元件與材料的電性分析,例如觀察半導體的p-n接面並量測接面深度、二維載子分布以及等效通道長度等。調制效率是掃描電容顯微術在訊號偵測能力上的一項重要指標,與p-n接面的SCM訊號平衡原理結合,所得的總電容變化關係,有利於討論調制效率對p-n接面深度觀察的影響。在本研究中,藉由調制範圍的增加,探討SCM樣品的載子濃度分布以及表面氧化層與背電極接觸之製備方式對調制效率的影響,並深入觀察調制電壓引致接面偏移的現象。研究結果顯示,由於SCM訊號的非單調性行為,調制效率因調制區域的載子濃度而異,造成接面深度的分析結果隨著調制範圍的擴大而往樣品中的低調制效率區域移動;在相同的氧化層製備條件下,表面氧化層對p型與n型樣品造成的氧化速率也不同,導致p型與n型區域的調制效率差異;不同的背電極接觸矽基板時,因功函數差異也導致p型與n型區域的調制效率差異。藉由探討上述各項變因對SCM調制效率的影響,可以得知調制效率對p-n接面觀察與量測的重要性。

With voltage modulation technology, scanning capacitance microscopy (SCM) is a metrology method analyzing electrical properties of semiconductor materials. SCM is extremely sensitive to capacitance variation and capable of electrical analyses of electronic devices and materials, such as observing p-n junctions and two-dimensional carrier distributions in semiconductors, as well as measuring the junction depth and effective channel length in electronic devices. Modulation efficiency (ME) is an important indicator of the signal detection in SCM. Combining the ME with the principle of signal balance at p-n junctions, one can establish the relation between the ME and the change in total capacitance, being helpful for discussing the influence of the ME on the observation of p-n junction depths. In this thesis, I discussed the influence of the carrier concentration distribution, the preparation processes of the surface oxide layer and the specimen contact electrode on the ME by increasing the modulation area. The modulation-voltage-induced junction shifts were also studied. Experimental results showed that the ME varied with carrier concentration in modulated area due to the non-monotonic behavior of the SCM signals. Therefore, the junction depth increased with the modulated area and hence shifted toward the area with a lower ME. With the same oxidation process, the surface oxide layer resulted in different oxidation rates for p-type and n-type specimens, leading to different ME values in p-type and n-type regions. For different electrodes contacting with a silicon substrate, the work function difference between the contact electrode and the silicon substrate leaded to different ME for p-type and n-type regions. According to the discussion on the factors influencing the ME, the importance of the ME to the observations and the measurements of p-n junctions was revealed.
URI: http://hdl.handle.net/11455/97980
Rights: 不同意授權瀏覽/列印電子全文服務
Appears in Collections:物理學系所

Files in This Item:
File SizeFormat Existing users please Login
nchu-107-7105054018-1.pdf9.63 MBAdobe PDFThis file is only available in the university internal network    Request a copy
Show full item record
 
TAIR Related Article

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.