Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/9822
標題: MgIn2O4 與氧化銦錫(ITO)之光電性質分析比較
作者: 賴明宏
關鍵字: Mg;M. W. Lee
出版社: 材料工程學研究所
摘要: 
本論文討論MgIn2O4在塊材燒結製作過程中,受溫度、時間之種種影響,所以我們要決定一個最佳化的工作條件以利於將來鍍膜能夠成功.而在鍍膜時對氧含量之條件取捨,使我們了解氧對於光學性質和電學性質有一個決定性的影響.其中氧量高卻造成光譜穿透率的下降,印證了理論當自由電子濃度高會造成電漿頻率升高,而導致可見光穿透下降的原因.

Optical and electrical properties of thin films of prepared by RF Indium-Tin-Oxide(ITO) and Magnesium_Indium-_Oxide(MgIn2O4)
Author: M. H. Lai Porfesser: M. W. Lee
We study the effect of sintering temperature, time on the preparation of MgIn2O4 target. The prepared target was analysed by X-ray diffraction and atomic analyser. Optimal condition for target preparation is obtained.
ITO and MgIn2O4 films were prepared by Rf sputtering electrical measurements revealed that the resistivity of the synthesiyed films is in the range 1.2k-2.6 μΩ-cm. Optical transmission measure reavealed the transmission is in the range og 80-90%.
Analysis indicated that the most important parameter in the suptted films is the Oxygen content. For high O content, the films exhibit high transmission and low resist. For low O-content, the films exhibit lower temperature and extrenly high reisit.
URI: http://hdl.handle.net/11455/9822
Appears in Collections:材料科學與工程學系

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